School of Electronics, Peking University develops two-dimensional transistor with speed exceeding silicon limit.
the research team of Professor Peng Lianmao and Researcher Qiu Chenguang from the School of Electronics, Peking University has prepared a 10nm ultra-short channel ballistic two-dimensional indium selenide transistor, which for the first time made the actual performance of the two-dimensional transistor exceed that of Intel's commercial 10nm node silicon-based Fin transistor , and reduce the operating voltage of the two-dimensional transistor to 0.5 V, which is also the fastest and lowest energy consumption two-dimensional semiconductor transistor in the world so far. The relevant research results are titled "Ballistic two-dimensional InSe transistors.
This work has achieved three technological innovations: using three layers of indium selenide with high carrier thermal velocity (smaller effective mass) as the channel, and achieving a room temperature ballistic rate as high as 83%, which is the highest value of field effect transistors at present. Much higher than the ballistic rate of silicon-based transistors (less than 60%); solved the problem of growing ultra-thin oxide layers on the surface of two-dimensional materials, prepared 2.6 nanometer ultra-thin double-gate hafnium oxide, and increased the device transconductance to 6 mS Micron, an order of magnitude more than all two-dimensional devices; pioneered doping-induced two-dimensional phase transition technology to overcome the international problem of gold-half contacts in the field of two-dimensional devices, refresh the total resistance to 124 ohm microns, and meet the requirements of future nodes of integrated circuits for transistors Resistor Requirements (220 ohms • microns).
