No, I refer to the change of photoresist reaction with the dose of light absorbed.
Photoresist does not change its structure linearly with the light dose it receives, but until a given threshold it does nothing and then, if the light dose is just a bit more,
suddenly changes it's chemical structure. So that while the projected image is smooth and changes gradually due to diffraction limits, the impressed line on the photoresist, and after developing and etching on the wafer, is way much sharper.
All this is well explained in this video:
BTW all this YouTube series by Zeiss (the historical optical subsystem supplier of ASML) on lithography is very instructive to get a good idea of how lithography works.