This is the key part:
"one of the beams of this technology is the same as the beam in the single-beam violet lithography technology, which is modulated into the required pattern, and finally micro-projected onto the photoresist for exposure. The other beam of light in this technology is modulated into a pattern complementary to the first beam of light, and undergoes the same or similar miniature projection process as the first beam of light, and is projected onto the photoresist together with the first beam of light. The yin and yang complementary patterns of the two beams of light are aligned at the edges. The two beams of light work together on the photoresist material, and the second beam of light acts as an inhibitor. The effect is to eliminate the influence of the first beam of light on the edge of the pattern due to diffraction,"
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Isn't it equivalent to increase the contrast of the photoresist?....but much more complex?
Photoresist contrast is already highly non-linear just for this exact reason. See