Chinese semiconductor industry

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tokenanalyst

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but they need something better (grating interferometer)
According to the patent and research information the grating interferometer which is mainly use in the high precision alignment of the wafer stage was codevelop between SMEE, Tsinghua and UPrecision in 2021. But is unclear the stage of development of its integration on the lithography machine

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tphuang

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This approach can help us to sort out this stuff from a different point of view.

There is a lot of discussion about when SMEE 28nm will be ready, but let's look at it from the opposite side!

There are not a lot of 28nm fabs going online in the next 2 years in China, so maybe is easier and more practical to list when the new 28nm lines will be (1) built and (2) put in volume production. Then try to guess for each line if a SMEE machine will be part of the setup.

From there we can infer a much more realistic and milestone bounded plan of SMEE machines introduction.

IOW it is not useful to know if SMEE machine is ready tomorrow, because first fab to use it will not come online tomorrow anyhow.

SMIC's Beijing and Lingang fabs are the obvious ones over the next 2 years. Huawei/PXW fab is the other obvious one. I think SMIC's Beijing fab and PXW fab should both be actively working/testing out SSA800 immersion machine right now. SMEE machine won't be ready until it gets tested in real production lines.

ICRD's fully Chinese 28nm line will probably come later when all the components are ready.

According to the patent and research information the grating interferometer which is mainly use in the high precision alignment of the wafer stage was codevelop between SMEE, Tsinghua and UPrecision in 2021. But is unclear the stage of development of its integration on the lithography machine

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Based on Havok's comment. Not integrated with DUVi yet. Maybe this will second gen will get mass produced in 2024 if all goes well.
 

PopularScience

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SMIC's Beijing and Lingang fabs are the obvious ones over the next 2 years. Huawei/PXW fab is the other obvious one. I think SMIC's Beijing fab and PXW fab should both be actively working/testing out SSA800 immersion machine right now. SMEE machine won't be ready until it gets tested in real production lines.

ICRD's fully Chinese 28nm line will probably come later when all the components are ready.


Based on Havok's comment. Not integrated with DUVi yet. Maybe this will second gen will get mass produced in 2024 if all goes well.
You forgot SMIC’s Shenzhen.

I remember SMIC has a new domestic equipment testing and verification line, similar to ICRD in Beijing. Maybe this is the first destination of mass production model of 28nm DUVi.
 

tokenanalyst

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I don't know whether Huawei EUV patient cause this, but ASML stock price really falls.
I think is maybe an overreaction, Huawei is not looking to compete directly with ASML but to have a machine that allows then to pattern the ctritical features of their chips. While ASML EUV machine is more general the Huawei patent looks more specific.
 

gelgoog

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Russia has created a prototype of a lithography machine that can do 7nm.
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"A lithographic installation is being developed at the Institute of Applied Physics of the Russian Academy of Sciences (IPF RAS) in Nizhny Novgorod. In 2011, a sample demonstrator of a lithograph with a working wavelength of 13.5 nm was built. It was a test stand in the framework of basic scientific research.
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In 2018, scientists from the Institute of Physics and Technology of the Russian Academy of Sciences published a paper that presented experimental data on a laser-plasma X-ray source based on xenon.

The results obtained by our scientists in achieving an innovative method of nanolithography – massless X-ray lithography at a wavelength of 6.7 nm-were clearly demonstrated.

Instead of the molten tin source used in projection lithography by ASML, the Russian development uses a xenon-based target. With comparable efficiency, this significantly simplifies the source design and laser system, minimizes contamination of optical elements, reduces the operating wavelength by 20% when operating at a wavelength of 10.8 nm, and by 2 times - at a wavelength of 6.7 nm."

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"But this is only one of the ways to develop Russian photolithography technology. There is another area of maskless EUV photolithography, namely the use of synchrotron radiation as the main source in lithographic equipment.

And in Russia, in March 2022, by order of the Ministry of Industry and Trade, they started developing the concept of a maskless X-ray photolithograph with a wavelength of less than 13.5 nm based on a synchrotron source. 670 million rubles were allocated for this work.
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Photolithography based on synchrotron radiation should appear in 5-10 years.
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It is noteworthy that synchrotron radiation is the next stage in the development of photolithography technology, thanks to which it is possible to achieve a transistor topology of less than 1 nm. But a particle accelerator should be attached to the factory.

Since the synchrotron can achieve stable radiation of even smaller wavelengths in the X-ray range, the technology will be the final evolution in lithographic equipment, where the produced nanostructures will be brought to the theoretical limit (less than 1 nm), when further reduction will be impossible.

Further technology will develop along the path of "layer cake" - transistors can only be placed one above the other."
 
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