The 11.2nm wavelength was abandoned early on because the conversion efficiency hovered at under 1%. This held true even with low grazing incidence optics. However, a Russian research institute proposed a solution to this by using a defocused
(wide dispersed) beam to irradiate Xenon. The principle is somewhat similar to how a pre-pulse laser precedes the main laser by forming Tin droplets into a flat concave disc to spread out the exposure area, before the main laser zaps it to achieve greater conversion efficiency. This is done with 1 laser instead of 2, without the shaping, by using Xenon gas targets vs droplets. This raises conversion efficiency to 3.9%.
Quote:
"
Xe laser-produced plasma with a gas-jet target is considered a promising λ = 11.2-nm radiation source for a possible extension of the EUV (Extreme UltraViolet) lithography. EUV spectra of the plasma radiation obtained with the aid of both a grating spectrograph and Bragg mirrors are presented. The absorption of the EUV radiation in the cold peripheral gas has been eliminated in another experiment by means of irradiating the target with a wide defocused laser beam that resulted in an increase of the EUV output by an order of magnitude. In that experiment, the conversion efficiency at λ = 11.2 nm amounted to 3.9%."
I place the chances the Russians succeeding with such a prototype anytime before 2028 at exactly negative -50%. They might get an extremely low power lab scale light source, optics, single stage workbench, vacuum chamber, gases, pumps, valves and various other components ready. However, everything else, they'll be relying on China's supply chain while they attempt to indigenize it over the next 20+ years. They need to cooperate with China or else they'll fall behind worse than they did during Soviet times. Russia has some top notch talent, but this just copium.