AssassinsMace
Lieutenant General
I don't see the US comforted. The China threat to Western supremacy will come faster than waiting for China to get old.
Chinese semiconductor industry
- Thread starter Hendrik_2000
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If the West actually believe that, all they needed to do it just wait China out. Doesn't seem like the case.
coolieno99
Junior Member
Here in Silicon Valley, there are many Chinese restaurants, Chinese supermarkets, Chinese bakery, and there's a large Chinese shopping center (Cupertino). Santa Clara has a sizable Korean community, while San Jose has a very large Vietnamese community. There's also local Chinese radio and TV broadcast services, Silicon Valley is about the only place in the U.S. where a Chinese does no feel out of place.
But there's a trend where less Chinese settling in the U.S. Back in the old days, 90% of oversea Chinese students graduating from U.S. colleges would stay in the U.S. after graduation. Currently 90% of oversea Chinese students graduating from U.S. colleges would return to China after graduation, mainly because the Living Standard of China is equal to the U.S. , if not higher, especially in the large cities. Probably it's getting to be like Japan, where practically no Japanese would immigrate to U.S.
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But the Indians are still rushing in. Their influence will be get bigger.
the Institute of Microelectronics has made new progress in the defect compensation of EUV lithography substrates.
Figure 1 (a) Optimization algorithm flow (b) Example of adaptive segmentation strategy (c) Merging and splitting of adaptive segmentation
Figure 2 (a) Compensation simulation results for substrate defects of different sizes (b) Compensation simulation results for substrate defects at different positions (c) Compensation simulation results for substrate defects with complex patterns (d) Substrate defects at different positions Compensation of , using different optimization algorithms, comparison of objective function convergence speed
Unlike the masks used in deep ultraviolet ( DUV ) lithography with a wavelength of 193 nm , the masks used in extreme ultraviolet ( EUV ) lithography are of a reflective design, and their structure consists of a multilayer film composed of approximately 40 layers of Mo and Si . At the technology node of immersion lithography, substrate fabrication and mask fabrication are sufficiently mature that the density and size of mask defects are at acceptable levels. However, in EUV lithography system, due to the limitation of reflectivity and shadow effect of mask, the defects of mask substrate are one of the important factors that affect the quality of lithography imaging and lead to yield loss.
Based on the above problems, the research group of Wei Yayi from the Institute of Microelectronics, in cooperation with the research group of Professor Ma Xu from Beijing Institute of Technology, proposed an improved mask absorption layer pattern optimization algorithm based on genetic algorithm. The algorithm adopts the evaluation function based on the normalized logarithmic slope of the lithography image and the edge error of the pattern, adopts the correction strategy of adaptive coding and successive approximation, and obtains higher correction efficiency and compensation accuracy. The effectiveness of the algorithm is tested and evaluated by comparing the lithography aerial images before and after correction of the rectangular contact holes of different mask substrate defects. The results show that the method can effectively suppress the influence of mask substrate defects and improve the lithography imaging results. fidelity with high convergence efficiency and mask manufacturability.
The paper Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm based on this research was recently published in the journal "Optics Express" [ Optics Express, Vol. 29, Issue 18, pp. 28872-28885 (2021) , DOI: 10.1364/OE.434787] , Wu Ruixuan, a doctoral student of the Institute of Microelectronics, is the first author of this article. Wei Yayi, a researcher at the Institute of Microelectronics, is the corresponding author of this article. This research was funded by the National Natural Science Foundation of China, the National Key Research and Development Program, the Beijing Natural Science Foundation, and the Chinese Academy of Sciences.
Based on the above problems, the research group of Wei Yayi from the Institute of Microelectronics, in cooperation with the research group of Professor Ma Xu from Beijing Institute of Technology, proposed an improved mask absorption layer pattern optimization algorithm based on genetic algorithm. The algorithm adopts the evaluation function based on the normalized logarithmic slope of the lithography image and the edge error of the pattern, adopts the correction strategy of adaptive coding and successive approximation, and obtains higher correction efficiency and compensation accuracy. The effectiveness of the algorithm is tested and evaluated by comparing the lithography aerial images before and after correction of the rectangular contact holes of different mask substrate defects. The results show that the method can effectively suppress the influence of mask substrate defects and improve the lithography imaging results. fidelity with high convergence efficiency and mask manufacturability.
The paper Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm based on this research was recently published in the journal "Optics Express" [ Optics Express, Vol. 29, Issue 18, pp. 28872-28885 (2021) , DOI: 10.1364/OE.434787] , Wu Ruixuan, a doctoral student of the Institute of Microelectronics, is the first author of this article. Wei Yayi, a researcher at the Institute of Microelectronics, is the corresponding author of this article. This research was funded by the National Natural Science Foundation of China, the National Key Research and Development Program, the Beijing Natural Science Foundation, and the Chinese Academy of Sciences.
Figure 1 (a) Optimization algorithm flow (b) Example of adaptive segmentation strategy (c) Merging and splitting of adaptive segmentation
Figure 2 (a) Compensation simulation results for substrate defects of different sizes (b) Compensation simulation results for substrate defects at different positions (c) Compensation simulation results for substrate defects with complex patterns (d) Substrate defects at different positions Compensation of , using different optimization algorithms, comparison of objective function convergence speed
broadsword
Brigadier
India is like China in the 20th century, when people envied the American dream and the rich built Western classical buildings, like some overseas Chinese in South-east Asia.
During the early 80s, many machinists from an American aircraft parts company in a SEA country chose to resettle in Australia when they were given the chance due to a shortage there.
So after taking into account the current status of China and the prevailing Sinophobic situation in the US, the number of engineers who eventually choose to immigrate to the US hopefully adds up to the low single digits - just 4-5.
Remember their team used to be 300 people but 1/3 of them quit because they had better opportunities. This is them cutting losses.
coolieno99
Junior Member
This is an update to my earlier post on overseas foreign students returning to home country.
Percentage of students returning to their home countries after graduation
(USA Ivy League survey 2018):
South Korea = 98%
China = 97%
Taipei = 78%
Hong Kong = 65%
Malaysia 57%
Indonesia = 44%
Philippines = 9%
India = 0.2%
would like a source for future debates with haters and racists.
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