Ion Beam Technologies for the 20nm Technology Node, 450mm Wafer Processes,
and Beyond
iong Chen, Junhua Hong, Jin Zhang, and Jeff Boeker
Kingstone Semiconductor Company
Abstract
An innovative ion beam line capable of high ion beam current production, excellent ion mass resolving
power, minimal energy contamination for sub-keV ion beams, all while maintaining high degrees of beam
intensity and angle uniformity, has been designed and developed to meet ion implantation process and
productivity requirements of the 20nm technology node (and beyond) and of 450mm wafers. The testing
results have demonstrated that the beam line’s performance meets the required specifications in terms of
ion beam current, energy purity and beam uniformities. The detailed designs and measured performance re-
sults are presented in this paper.
and Beyond
iong Chen, Junhua Hong, Jin Zhang, and Jeff Boeker
Kingstone Semiconductor Company
Abstract
An innovative ion beam line capable of high ion beam current production, excellent ion mass resolving
power, minimal energy contamination for sub-keV ion beams, all while maintaining high degrees of beam
intensity and angle uniformity, has been designed and developed to meet ion implantation process and
productivity requirements of the 20nm technology node (and beyond) and of 450mm wafers. The testing
results have demonstrated that the beam line’s performance meets the required specifications in terms of
ion beam current, energy purity and beam uniformities. The detailed designs and measured performance re-
sults are presented in this paper.