KST's new dual-series ion implanters make their debut, solidifying the strategic puzzle of domestically produced high-end equipment.
Hyperion Series Advanced Process High-Current Ion Implanter
As chip manufacturing continues to evolve towards advanced nodes, ion implantation processes face four key challenges: balancing precision and throughput in low-energy, ultra-shallow junction implantation; balancing high throughput with low-energy control in high-current applications; reducing nonlinear divergence due to reduced ion beam angle uniformity; and controlling particulate contamination. These challenges restrict improvements in chip yield. Related key processes place extreme demands on equipment energy control, beam stability, and angle accuracy, leading to long-term pressures from both technological challenges and supply constraints for domestically produced equipment.
The Hyperion series targets the high-end chip manufacturing needs of advanced process logic chips and advanced memory (DRAM, 3D NAND), fully matches the advanced domestic process manufacturing, solves industry pain points, is equipped with independent core modules, and has performance indicators comparable to mainstream imported equipment, providing an independent and controllable all-round customized solution for advanced process ion implantation technology.
iKing 360 Series Medium Current Ion Implanter
As another core equipment masterpiece from KST, the iKing 360 series medium-current ion implanter focuses on key customer needs such as narrow linewidth, high-precision doping, and low-pollution control, achieving breakthroughs in several key technologies including energy performance, angle control, high-temperature adaptability, and mass production versatility. The equipment meets the requirements of various mainstream processes, can cover some high-energy processes, and offers over 30% higher capacity than traditional medium-current equipment, while also being compatible with 6/8-inch silicon carbide processes.
In terms of high-precision angle and energy control, the iKing 360 precisely controls the parallelism and divergence angle of the ion beam to meet the stringent standards of ion implantation angle repeatability in advanced processes; it supports high-temperature/ultra-low-temperature implantation, which can ensure wafer stability and temperature uniformity, while optimizing the channel implantation effect to meet the requirements of wide bandgap semiconductors such as SiC and GaN.
As chip manufacturing continues to evolve towards advanced nodes, ion implantation processes face four key challenges: balancing precision and throughput in low-energy, ultra-shallow junction implantation; balancing high throughput with low-energy control in high-current applications; reducing nonlinear divergence due to reduced ion beam angle uniformity; and controlling particulate contamination. These challenges restrict improvements in chip yield. Related key processes place extreme demands on equipment energy control, beam stability, and angle accuracy, leading to long-term pressures from both technological challenges and supply constraints for domestically produced equipment.
The Hyperion series targets the high-end chip manufacturing needs of advanced process logic chips and advanced memory (DRAM, 3D NAND), fully matches the advanced domestic process manufacturing, solves industry pain points, is equipped with independent core modules, and has performance indicators comparable to mainstream imported equipment, providing an independent and controllable all-round customized solution for advanced process ion implantation technology.
iKing 360 Series Medium Current Ion Implanter
As another core equipment masterpiece from KST, the iKing 360 series medium-current ion implanter focuses on key customer needs such as narrow linewidth, high-precision doping, and low-pollution control, achieving breakthroughs in several key technologies including energy performance, angle control, high-temperature adaptability, and mass production versatility. The equipment meets the requirements of various mainstream processes, can cover some high-energy processes, and offers over 30% higher capacity than traditional medium-current equipment, while also being compatible with 6/8-inch silicon carbide processes.
In terms of high-precision angle and energy control, the iKing 360 precisely controls the parallelism and divergence angle of the ion beam to meet the stringent standards of ion implantation angle repeatability in advanced processes; it supports high-temperature/ultra-low-temperature implantation, which can ensure wafer stability and temperature uniformity, while optimizing the channel implantation effect to meet the requirements of wide bandgap semiconductors such as SiC and GaN.
