Tin-based stanene could conduct electricity with 100 percent efficiency
Stanene – 2D Tin to be the Next Super Material?
Released November 22, 2013
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According to a news release from the Department of Energy’s SLAC National Accelerator Laboratory, 2-D tin could be the next super material. Researchers posit that 2-D tin could be the world’s first material to conduct electricity with 100 efficiency at the temperatures that computer chips work.
The new material is called “stanene.”
“Stanene could increase the speed and lower the power needs of future generations of computer chips, if our prediction is confirmed by experiments that are underway in several laboratories around the world,” noted team leader Shoucheng Zhang, a physics professor at Stanford and the Stanford Institute for Materials and Energy Sciences, in a statement.
For the last ten years, researchers have been computing and predicting the electronic features of a special class of materials called topological insulators, which conduct electricity only on their outsides edges or surface and not via their interiors. When this special class of materials is just one atom thick, its edges conduct electricity with 100 percent efficiency.
“The magic of topological insulators is that by their very nature, they force electrons to move in defined lanes without any speed limit, like the German autobahn,” Zhang posited. “As long as they’re on the freeway – the edges or surfaces – the electrons will travel without resistance.”
The researchers previously predicted that mercury telluride and several combinations of bismuth, antimony, selenium and tellurium should be topological insulators. Though several experiments confirmed their prediction, none of those materials is a perfect conductor of electricity at room temperature.
“We knew we should be looking at elements in the lower-right portion of the periodic table,” said Yong Xu, who is now at Tsinghua University. “All previous topological insulators have involved the heavy and electron-rich elements located there.”
Their computations suggested that a single layer of tin would be a topological insulator at and above room temperature, and that adding fluorine atoms to the tin would bring its operating range to at least 212 degrees Fahrenheit.
According to Zhang, stanene wiring should notably lower the power appetite and heat generation of microprocessors.
“Eventually, we can imagine stanene being used for many more circuit structures, including replacing silicon in the hearts of transistors,” Zhang noted. “Someday we might even call this area Tin Valley rather than Silicon Valley.”