China's domestic extreme ultraviolet (EUV) lithography development is far from a distant dream. The newest system, now undergoing testing at Huawei's Dongguan facility, leverages laser-induced discharge plasma (LDP) technology, representing a potentially disruptive approach to EUV light generation. The system is scheduled for trial production in Q3 2025, with mass manufacturing targeted for 2026, potentially positioning China to break ASML's technical monopoly in advanced lithography. The LDP approach employed in the Chinese system generates 13.5 nm EUV radiation by vaporizing tin between electrodes and converting it to plasma via high-voltage discharge, where electron-ion collisions produce the required wavelength. This methodology offers several technical advantages over ASML's laser-produced plasma (LPP) technique, including simplified architecture, reduced footprint, improved energy efficiency, and potentially lower production costs.
