At the IFWS&SSLCHINA 2025 forum in Xiamen, Xia Ning, CTO of Hangzhou Gallium Core Semiconductor Co., presented a keynote on
"Large-Size Gallium Oxide Single Crystal Growth and Defects." He highlighted advancements in growing high-quality gallium oxide (GaO) single crystals—key fourth-generation semiconductors with ultra-wide bandgap (4.8 eV), high breakdown electric field (8 MV/cm), UV transparency (>80%), and low manufacturing cost.
Key challenges include GaO's volatility at high temperatures, high melting point, and poor thermal conductivity, which complicate crystal growth and require specialized oxygen-rich environments and novel equipment. While methods like floating zone and cold crucible lack industrial viability, the
Czochralski,
casting, and
vertical Bridgman (VB) techniques show strong potential especially casting and VB for large-scale production.
Gallium Core has successfully grown
8-inch GaO crystals in various orientations and doping levels using these methods. The technology enables high-quality, low-cost substrates, with projected costs under
2000 RMB per 8-inch wafer, expected to drop further within 2–3 years. This will help overcome industry bottlenecks such as large-area epitaxy, defect control, p-type doping, and high-current device fabrication.
With mass production on the horizon, GaO is poised to accelerate industrial adoption offering breakthroughs in defense and civilian applications (including power electronics, UV devices, and high-temperature systems) and drive a multi-billion dollar market.