Recently, Jingce Electronics independently developed and launched the JHP560 series third-generation power semiconductor dynamic reliability test system.
Jingce Electronics explains that this system simulates high-temperature, dynamic, and high-frequency AC switching conditions found in real-world applications. Through high-capacity, high-performance testing (wide voltage, high frequency, and high dv/dt), it accurately captures early failure risks caused by gate oxide defects, interface state degradation, and intrinsic material defects. This enables efficient device reliability assessment and screening, effectively improving device yield and long-term stability. It can be widely used in reliability lab R&D verification and mass production quality control, helping customers achieve reliable mass production with "early detection, high efficiency, and high cost-effectiveness."
With their core advantages such as high voltage resistance, high temperature resistance, high-frequency switching and low power consumption, silicon carbide and gallium nitride are rapidly replacing traditional silicon devices, becoming the key cornerstone of the next generation of power electronics systems, and their applications are growing explosively.
At the same time, these characteristics also place more stringent requirements on the reliability verification and characteristic testing of SiC power devices, especially in high-end application fields such as automotive-grade. As a core evaluation tool, dynamic reliability testing not only provides key dynamic parameters, but also reveals the potential risks and optimization directions of the device by simulating actual working conditions.
Previously, the new version of the AQG324 automotive module reliability standard, led by the European Center for Power Electronics (ECPE), was officially implemented, incorporating QL-08 to QL-11 dynamic reliability tests into mandatory certification requirements, indicating that dynamic reliability testing has become a "must-answer question" in the research and development and industrialization process of SiC power devices.