Chinese semiconductor thread II
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Xinde Semiconductor achieves breakthrough in TGV technology
Xinde Semiconductor has achieved a significant breakthrough in wafer-level glass interposer 2.5D fan-out packaging technology using TGV (Through Glass Via) structures. As semiconductor processes approach the physical limits of Moore’s Law, advanced packaging solutions like 2.5D and 3D integration have become essential for sustaining performance improvements. The interposer serves as a critical bridge between chips, directly influencing data transmission speed and system scalability.
Traditional silicon-based interposers offer excellent electrical performance and high interconnect density but come with manufacturing costs exceeding 30% of total packaging expenses and complex production processes that limit widespread adoption. Organic interposers are cheaper but suffer from high signal loss at high frequencies, poor thermal expansion matching with chips, and susceptibility to warping—making them unsuitable for demanding high-density applications.
Glass-based TGV interposers provide a balanced solution with superior performance and cost-effectiveness. They offer extremely low high-frequency insertion loss, excellent mechanical strength, near-matched thermal expansion coefficients to silicon chips, and significantly improved manufacturability. This makes TGV ideal for next-generation AI computing, HPC, 5G millimeter wave, and optical communication systems.
Xinde Semiconductor, in collaboration with Stallone’s team at Southeast University, has successfully developed a wafer-level glass interposer technology that meets precise packaging design requirements. The first sample is a 2.5D module for AI acceleration featuring a domestically developed 7nm GPU core, four HBM2E memory chips delivering over 460GB/s bandwidth, and a 400μm thick TGV-based interconnect layer—providing strong hardware support for high-performance computing.
Performance simulations show that the TGV structure has lower insertion loss compared to traditional through-silicon via (TSV) technology. Even under high bit-rate conditions where eye diagrams degrade, TGV maintains better signal integrity than TSV. The technology achieves key advancements in four areas: micro-vias of 62.5μm diameter with a 7:1 aspect ratio and three times higher interconnect density; ultra-fine RDL lines at ≤2μm width/spacing supporting up to 10⁴ I/O/mm² for HBM integration; low warpage control below 50μm on 300mm wafers with a yield exceeding 97%; and exceptional RF performance with glass dielectric loss (Df) as low as 0.004 at 10GHz.
As a leading player in mid-to-high-end semiconductor packaging, Xinde Semiconductor offers comprehensive services across Bumping, WLCSP, Flip Chip PKG, QFN, BGA, SIP, SIP-LGA, and 2.5D packaging. This TGV breakthrough highlights the company’s strong technical capability and innovation in advanced packaging solutions. It not only strengthens China's domestic high-end semiconductor supply chain but also enhances its global competitiveness in next-generation chip technologies.
Traditional silicon-based interposers offer excellent electrical performance and high interconnect density but come with manufacturing costs exceeding 30% of total packaging expenses and complex production processes that limit widespread adoption. Organic interposers are cheaper but suffer from high signal loss at high frequencies, poor thermal expansion matching with chips, and susceptibility to warping—making them unsuitable for demanding high-density applications.
Glass-based TGV interposers provide a balanced solution with superior performance and cost-effectiveness. They offer extremely low high-frequency insertion loss, excellent mechanical strength, near-matched thermal expansion coefficients to silicon chips, and significantly improved manufacturability. This makes TGV ideal for next-generation AI computing, HPC, 5G millimeter wave, and optical communication systems.
Xinde Semiconductor, in collaboration with Stallone’s team at Southeast University, has successfully developed a wafer-level glass interposer technology that meets precise packaging design requirements. The first sample is a 2.5D module for AI acceleration featuring a domestically developed 7nm GPU core, four HBM2E memory chips delivering over 460GB/s bandwidth, and a 400μm thick TGV-based interconnect layer—providing strong hardware support for high-performance computing.
Performance simulations show that the TGV structure has lower insertion loss compared to traditional through-silicon via (TSV) technology. Even under high bit-rate conditions where eye diagrams degrade, TGV maintains better signal integrity than TSV. The technology achieves key advancements in four areas: micro-vias of 62.5μm diameter with a 7:1 aspect ratio and three times higher interconnect density; ultra-fine RDL lines at ≤2μm width/spacing supporting up to 10⁴ I/O/mm² for HBM integration; low warpage control below 50μm on 300mm wafers with a yield exceeding 97%; and exceptional RF performance with glass dielectric loss (Df) as low as 0.004 at 10GHz.
As a leading player in mid-to-high-end semiconductor packaging, Xinde Semiconductor offers comprehensive services across Bumping, WLCSP, Flip Chip PKG, QFN, BGA, SIP, SIP-LGA, and 2.5D packaging. This TGV breakthrough highlights the company’s strong technical capability and innovation in advanced packaging solutions. It not only strengthens China's domestic high-end semiconductor supply chain but also enhances its global competitiveness in next-generation chip technologies.
Way closer than most Western pundits thinks.
Supposedly, SMIC — China’s only advanced-node foundry — is using next-gen lithography machines from the Chinese Academy of Sciences (CAS) and SMEE for production.