Chinese semiconductor thread II

[tphuang]

The US could slap sanctions on the Chinese EV sector, as they did with Huawei, and screw over all these myopic idiots. I hope they do it because they don't listen to anything the Chinese government says.

so this is a lot less dire of a situation you would think. Domestic chipmakers have 11% market share here. Which sounds small, but EV SoC market is tiny compared to smart phones. As such, if they get a ban on Qualcomm chips, they can just switch to Huawei chips and production ramp up is do-able.

 

[tokenanalyst]

A new breakthrough in domestic RF! The Huzhou Hantianxia SAW filter production line is about to be put into production, and we sincerely invite you to witness the "core" future together​

Huzhou Handianxia Electronics Co., Ltd. will usher in a historic moment - the first SAW filter production line will be officially put into production! As a key layout in the field of domestic RF front-end, the first phase of the project plans to produce 10,000 wafers per month , marking a solid step forward in China's process of self-reliance in high-end filters.

Please, Log in or Register to view URLs content!

Please, Log in or Register to view URLs content!

 

[Michael90]

The US could slap sanctions on the Chinese EV sector, as they did with Huawei, and screw over all these myopic idiots. I hope they do it because they don't listen to anything the Chinese government says.

lol I don’t think the Chinese government told them to divert to local chips in the automobile sector.I believe if the government did then they will have to listen to the government. I just think it’s market forces at play here, since there has been no issues of threat of sanctions in the EV chips sectors yet, so car companies are just getting the best products they can get in the market, and unfortunately US auto chips seem to be the best at the moment so Chinese EV car companies will keep relying on them more than the ones from local players, just like Chinese AI companies have been favoring Nvidia chips despite the sanctions even trying to smuggle them through third parties it’s not because they like Nvidia but because Nvidia still has the best performing chips in the market . So it’s normal they are trying to get their hands on it to remain competitive in the market, it will remain the case until Chinese companies catch up fully then the shift will happen naturally. So we can’t blame these companies .

 

[Michael90]

Inside Beijing’s Chipmaking Offensive
View attachment 156080

Please, Log in or Register to view URLs content!

Interesting. So it seems China should focus more on process control,ion implanters,Dicing and bonding . Since these are the sectors they have loss market share in. The other sectors seems to be doing quite well. Impressive . Will be interesting to see how this diagram will look like in another 5 years

 

[tokenanalyst]

Galaxy Microelectronics plans to invest RMB 310 million to build an integrated circuit discrete device base.​

Galaxy Microelectronics issued an announcement stating that Changzhou Galaxy Century Microelectronics Co., Ltd. plans to invest RMB 310 million of its own funds to implement the "High-end Integrated Circuit Discrete Device Industrialization Base Phase I Factory Construction Project" in order to improve the company's integrated circuit discrete device production, processing and manufacturing capabilities and expand the production scale of integrated circuit discrete device products .

Project Status
Project name: Phase I plant construction project of high-end integrated circuit discrete device industrialization base

Project Amount: The total investment of the project is estimated to be approximately RMB 310 million

Implementation location: Xuejia Town, Xinbei District, Changzhou City, Jiangsu Province

Construction period: 30 months, the specific construction period is calculated from the start of the project foundation
Construction content: It is planned to lay the foundation for the subsequent construction of a high-end integrated circuit discrete device industrialization base by purchasing land and carrying out factory construction projects.

It is reported that Galaxy Microelectronics adopts the IDM model. The company has the integrated management capabilities under the IDM model, integrating chip design, manufacturing and packaging and testing, forming an integrated capability of "design-manufacturing-packaging and testing", and improving product performance and cost control efficiency. The company can provide customers with customized packaging and testing foundry services to meet the specific needs of different customers.

As a leading domestic manufacturer of discrete semiconductor devices, Galaxy Microelectric's main products include small signal devices, power devices, optoelectronic devices, power management ICs and third-generation semiconductor (SiC, GaN) devices. Its products are widely used in automotive electronics, consumer electronics, industrial control, new energy and 5G communications.

In order to seize market opportunities, Galaxy Microelectronics continues to accelerate the development and industrialization of high-end products. At present, the company has the initial ability to design SiC MOSFET and GaN HEMT chips, and has achieved small-batch applications.​

Please, Log in or Register to view URLs content!

 

[tokenanalyst]

Shangji Semiconductor completed a C round of financing of hundreds of millions of yuan, and is a domestic semiconductor equipment manufacturer.​

Recently, semiconductor equipment manufacturer Wuxi Shangji Semiconductor Technology Co., Ltd. (Shangji Semiconductor) announced the completion of hundreds of millions of RMB in Series C financing. Many institutions participated in the investment, including Huaqiang Venture Capital, CRRC Guochuang, Wuxi Zhanxin Fund, Nanjing Jushi, Suqian Industrial Investment, Guoxin Hongsheng, Guangzhou Industrial Investment and Legend Capital, the B-round investor.

According to public information, Shangji Semiconductor was established in 2021. It is a manufacturer specializing in the research and development and production of domestic semiconductor equipment. Its main equipment includes metal sputtering deposition (PVD), chemical vapor deposition (CVD), and plasma dry etching (ETCH). It serves integrated circuits (IC), power devices (Power Device), microelectromechanical systems (MEMS), advanced packaging (Advanced Packaging), compound semiconductors (III-V), radio frequency (RF), and optoelectronics (Optoelectronic) customers. The equipment has excellent repeatability and stability, low failure rate, long service life, and easy operation and maintenance.



The core team of Shangji Semiconductor has developed the only world-class VOx and Getter process technology in China, breaking the foreign monopoly. Its domestic market share in the PVD equipment segment is over 80%.

Please, Log in or Register to view URLs content!

 

[tokenanalyst]

 

[tokenanalyst]

Retention and endurance analysis for 2T0C DRAM based on ALD-ITZO thin film transistors.​

Abstract​

Dynamic random access memory (DRAM) technology is crucial in modern integrated circuits. However, the conventional one-transistor-one-capacitor (1T1C) DRAM is approaching its limitation scalability in 10 nm technical node, posing challenges for storage capacity and integration. Therefore, research has focused on incorporating 3D-stacking DRAM to enhance both capacity and integration. Among these advancements, the capacitor-less-two-transistor (2T0C) was demonstrated as a novel architecture to facilitate the development of 3D DRAM for integration enhancement. Numerous studies have employed metal oxide semiconductors (MOSs) as the channel material for 2T0C DRAM. As a novel MOS, indium tin zinc oxide (ITZO) has demonstrated exceptional performance in thin-film transistors (TFTs) with high mobility and on-current, surpassing most widely used MOS in 2T0C DRAM. In this study, ITZO TFTs and 2T0C DRAM devices were fabricated via atomic layer deposition for comprehensive film and device characterizations. The individual ITZO TFTs exhibited the on/off ratio of 106 and the leakage current of 10−5 μA μm−1. The 2T0C DRAM devices were utilized to characterize the retention, endurance, operation window and response time for device evaluation and comparison with 1T1C DRAM. The results revealed that various sizes of 2T0C DRAM devices demonstrated retention time ranging from 10 to 100 s, an endurance of 105 program-erase cycles, an operation voltage window of 5.05 V and a response time ranging from 0.34 ms to 0.7 ms. Notably, the transfer characterizations of the fabricated ITZO TFT exhibited a distinct ‘0’ read state different from the fresh state, which supports a novel reclassification of the operation states of 2T0C DRAM.

Please, Log in or Register to view URLs content!

 

[tokenanalyst]

Inside Beijing’s Chipmaking Offensive
View attachment 156080

Please, Log in or Register to view URLs content!

Interesting. So it seems China should focus more on process control,ion implanters,Dicing and bonding . Since these are the sectors they have loss market share in. The other sectors seems to be doing quite well. Impressive . Will be interesting to see how this diagram will look like in another 5 years

I do not understand why people care about the mediocre opinions of a bunch of stooges H.G. Think Tankers in a complex subject like the semiconductor industry and much less about China semiconductor industry. I can bet money that these stooges don't know where to look or properly understand this subject to give policy advice. But here we are

 

[tokenanalyst]

Tianren Micro-Nano new nanoimprint lithography production lines.​

GL 300 Cluster Gen2 Fully Automatic Nanoimprint Lithography Production Line​

GL 300 Cluster Gen2 is a powerful fully automatic nanoimprint lithography production line that integrates the entire process from nanoimprint wafer pretreatment to nanoimprint lithography. The equipment can choose inkjeting and spin coating functions. It is equipped with Tianren micro-nanoimprint technology as standard, which can achieve full-automatic high-precision (better than 10nm*), high aspect ratio (better than 10:1*) nanostructure replication mass production of 200/300mm wafer substrates and 300*300mm square substrates (the world's first), with a production capacity of up to 40WPH. The equipment is suitable for large-scale mass production in application fields such as DOE, AR/VR diffraction optical waveguides (including bevel gratings), line grating polarization, super lenses, biochips, LEDs, microlens arrays, etc.


​

GL SR-V Vacuum Stepper Nanoimprint Lithography Equipment​

GL SR-V is Tianren Micro-Nano's fully automatic step-by-step high-precision nanoimprint lithography equipment, which can efficiently make master molds or directly pattern complex structures on substrates. The equipment can choose inkjeting and spin coating functions, and the size of the panel unit can be flexibly defined, easily coping with various master needs from small to large, with a maximum of 500mm×500mm. Tianren Micro-Nano panel-level step and repeat equipment can splice 6th generation lines 1850mm×1500mm, greatly reducing the production cost of nanoimprint lithography master molds and making low-cost nanoimprint production possible. GL SR-V nanoimprint lithography equipment can be used to produce large-format master molds required for Tianren Micro-Nano's fully automatic nanoimprint lithography production line equipment (GL300 Cluster), thereby realizing efficient mass production of AR/VR, diffractive optical devices, metasurfaces and biochips.

Please, Log in or Register to view URLs content!

Please, Log in or Register to view URLs content!