Three firsts! Jiufengshan Laboratory has made major breakthroughs in the field of compound semiconductors
Gallium nitride (GaN) is reshaping the rules of the game in the semiconductor industry. Recently, Jiufengshan Laboratory has achieved a series of breakthrough results from materials, devices to industrial applications.
In the clean room of Jiufengshan Laboratory, Wu Chang, chief expert in the wireless field of the research center, pointed to an 8-inch silicon-based nitrogen-polar gallium nitride substrate and introduced that the laboratory has made three disruptive innovations in the field of gallium nitride -
The world's first 8-inch silicon-based nitrogen-polar gallium nitride substrate,
The country's first 100nm high-performance gallium nitride wafer PDK platform,
20-meter long-distance wireless energy transmission technology, and in the future, science fiction scenes such as "second charging" for mobile phones, "charging while running" for electric vehicles, and "clairvoyance" for radar detection are accelerating into reality.
Gallium nitride (GaN) is reshaping the rules of the game in the semiconductor industry. Recently, Jiufengshan Laboratory has achieved a series of breakthrough results from materials, devices to industrial applications.
In the clean room of Jiufengshan Laboratory, Wu Chang, chief expert in the wireless field of the research center, pointed to an 8-inch silicon-based nitrogen-polar gallium nitride substrate and introduced that the laboratory has made three disruptive innovations in the field of gallium nitride -
The world's first 8-inch silicon-based nitrogen-polar gallium nitride substrate,The country's first 100nm high-performance gallium nitride wafer PDK platform,20-meter long-distance wireless energy transmission technology, and in the future, science fiction scenes such as "second charging" for mobile phones, "charging while running" for electric vehicles, and "clairvoyance" for radar detection are accelerating into reality.
