Chinese semiconductor thread II

OptimusLion

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Changsha releases list of key construction projects for 2025, with multiple semiconductor projects on the list


Changsha released a list of key construction projects in 2025, with 659 key construction projects in 2025 and an estimated annual investment of about 247.5 billion yuan. The semiconductor projects on the list include: HKC Mini-LED backlight/direct display module and complete machine project, Hunan Sanan Semiconductor Quality Improvement Project, Changsha New Generation Semiconductor Industry Chain Technology Collaborative Transformation Project, Shaoguang Core Material Headquarters and Semiconductor Photomask Material Localization Project, Xinyide Integrated Circuit Packaging and Testing Industrial Park Project, and Gokewei's domestic artificial intelligence chip R&D and verification platform upgrade and transformation project for advanced processes.


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tokenanalyst

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Another breakthrough in red perovskite LED​


Yuan Mingjian, professor at the School of Chemistry of Nankai University, Chen Jun, academician of the Chinese Academy of Sciences, and Zhang Wei, researcher at the School of Chemistry of Nankai University, led a scientific research team to successfully solve this problem and developed a pure red light perovskite electroluminescent device (LED) with both high efficiency and high stability. The research team's achievement was published online in the international academic journal Nature on February 20.

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"Our eyes are extremely sensitive to colors. The mixing and superposition of red, green and blue colors with different brightness can form a variety of colors. With the help of the 'pure red' of pure red perovskite LEDs, the final display effect of the entire picture will become richer and more colorful," said Yuan Mingjian.

Yuan Mingjian introduced that the research team reported a new strategy for in-situ preparation of perovskite van der Waals epitaxial heterojunction by an all-solution method to improve the phase stability of perovskite quantum dots. On this basis, they successfully developed a pure red light perovskite LED with world-class performance and stability, laying a technical foundation for the application of this "pure red" in ultra-high-definition displays.

In the future, this pure "Chinese red" may also promote the creation of a more dazzling and colorful "on-screen world". Chen Jun said that this technology is expected to further promote technological innovation in the ultra-high-definition display industry. For example, human-computer interaction fields such as virtual reality have high requirements for screen resolution and color saturation, and this breakthrough can provide technical support for their development in the future.​

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tokenanalyst

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Settled in Xi'an! The R&D base of a domestic EDA giant has landed in Xi'an High-tech Zone!​



According to Xi'an Hi-Tech News, on February 18, Xi'an BGI-Jiutian Co., Ltd. (hereinafter referred to as "Xi'an BGI") was officially unveiled in Xi'an Hi-Tech Zone, and the BGI-Jiutian R&D base project was launched.

It is reported that Xi'an HuaDa JiuTian is a wholly-owned subsidiary of HuaDa JiuTian. It is an important R&D center of HuaDa JiuTian, a talent innovation center integrating school and enterprise, a sales business center and a technical support center for the western region.
Xi'an HuaDa JiuTian combines the talent advantages of universities in Xi'an and the distribution of high-tech scientific research institutions, focusing on talent training, cultivating excellent EDA talents for the domestic integrated circuit industry, and working closely with leading companies in the domestic integrated circuit design and manufacturing industry to provide customers with one-stop EDA and related services.

On February 13, HuaDa Emphaty stated on the investor interaction platform that AI technology plays an important role in promoting the development of EDA, and the company has applied AI technology to existing products; the company will continue to pay attention to domestic and foreign industry development trends, actively seize corresponding market opportunities, and achieve steady development.
Liu Weiping, chairman of HuaDa JiuTian, also said in an interview that some of our tools have begun to use AI technology, and the effect is quite good. Efficiency has been significantly improved. Some work that used to take 10 hours can now be completed in 1 hour. For example, database building is a function that we now complete more with AI. There are many similar operations in this link, and the only difference is the product type and process. Before AI technology was used, we used calculation methods, and the amount of calculation was particularly huge when making parameters for each process angle. But with AI, we can let AI learn what we have done before, and then use AI to do this work, and the efficiency will be greatly improved. In this way, engineers only need to do the optimization work.

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tokenanalyst

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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels.​

Highlights​

  • A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of DNW = 22.4 ± 2.4 nm and interwire spacing of 90 nm.​
  • A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs).​
  • By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec-1.​

Abstract​

Gate-all-around field-effect transistors (GAA-FETs) represent the leading-edge channel architecture for constructing state-of-the-art high-performance FETs. Despite the advantages offered by the GAA configuration, its application to catalytic silicon nanowire (SiNW) channels, known for facile low-temperature fabrication and high yield, has faced challenges primarily due to issues with precise positioning and alignment. In exploring this promising avenue, we employed an in-plane solid–liquid-solid (IPSLS) growth technique to batch-fabricate orderly arrays of ultrathin SiNWs, with diameters of DNW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays. By optimizing the source/drain contacts, high-performance GAA-FET devices have been successfully fabricated, based on these catalytic SiNW channels for the first time, yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1, closing the performance gap between the catalytic SiNW-FETs and state-of-the-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography. These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs, well suited for monolithic 3D integrations.

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OptimusLion

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Hangzhou is not only home to the "Six Little Dragons", but also has a fast-growing chip industry


During the Spring Festival of the Year of the Snake, DeepSeek led to the popularity of Hangzhou's "Six Little Dragons". Many provinces and cities reflected on why the "Six Little Dragons" did not appear in their own cities, and even provincial media asked soul-searching questions such as "Why can't we develop the 'Six Little Dragons of Hangzhou'?" For a time, learning from Hangzhou's innovative atmosphere, industrial ecology and business environment became a trend in various places.

Hangzhou is silent, but smiling - the "Six Little Dragons" are just the result of hard work, and are representatives that stand out from many outstanding companies. Their true capabilities are still below the iceberg. The fertile industrial soil that can cultivate the "Six Little Dragons" must have strong vitality to incubate more surprises, such as integrated circuits. In recent years, with the efforts of the business environment, innovation ecology, and policy support, Hangzhou's integrated circuit industry has developed rapidly, gathering a large number of high-quality chip companies, giving it the confidence to compete for the title of "Hundred Billion City".

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OptimusLion

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Samsung and Yangtze Memory Technologies have a major collaboration, and V10 NAND will use Chinese company patents

According to Korean media reports, Samsung has confirmed that starting with V10 (10th generation), it will use the patented technology of Chinese NAND manufacturer YMTC, especially in the new advanced packaging technology "hybrid bonding". YMTC is the first company to apply hybrid bonding to 3D NAND, so it has a strong patent accumulation in related technologies. Samsung Electronics chose to resolve possible risks in the future by reaching a licensing agreement with YMTC rather than risking patent circumvention.
According to ZDNet Korea, Samsung Electronics recently signed a licensing agreement with YMTC for 3D NAND hybrid bonding patents.
This information means that Samsung has foreseen the emergence of a non-American patent system in the future. This system is rooted in years of our independent development of equipment, followed by establishing proprietary processes and patent frameworks based on that foundation. For instance, we have effectively become the global leader in advanced multiple-exposure techniques.
Last year, Samsung purchased our domestically developed bonding equipment from our independent supply chain, which means they already know what’s coming next.




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tokenanalyst

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Single Rare-Earth Ion Doped Tin-Oxo Nanocluster Photoresists for High-Resolution Extreme Ultraviolet Lithography​


Rare-earth (RE) metals are known as industrial vitamins and show significant regulatory effects in many fields. In this work, we first demonstrated that the vitamin effect of RE metals can also be applied to extreme ultraviolet (EUV) lithography. Using a Sn8RE oxo cluster as the universal platform, different individual RE metal ions were successfully doped to obtain a series of isomorphic heterometallic clusters (RE = Y, Sm, Eu, Ho, Er). Lithography experiments have shown that the doped RE ions displayed a significant influence on technical parameters. As a result, an electron-beam lithography (EBL) line width of 11.95 nm was achieved by Sn8Er, and an EUV lithography critical dimension (CD) of 15.90 nm was obtained by Sn8Ho under an exposure dose of 52.64 mJ/cm2. These findings expand the applications of rare earths in high-precision semiconductor manufacturing and provide a new strategy for the development of high-resolution EUV photoresists.​

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Wahid145

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Samsung and Yangtze Memory Technologies have a major collaboration, and V10 NAND will use Chinese company patents

According to Korean media reports, Samsung has confirmed that starting with V10 (10th generation), it will use the patented technology of Chinese NAND manufacturer YMTC, especially in the new advanced packaging technology "hybrid bonding". YMTC is the first company to apply hybrid bonding to 3D NAND, so it has a strong patent accumulation in related technologies. Samsung Electronics chose to resolve possible risks in the future by reaching a licensing agreement with YMTC rather than risking patent circumvention.
According to ZDNet Korea, Samsung Electronics recently signed a licensing agreement with YMTC for 3D NAND hybrid bonding patents.
This information means that Samsung has foreseen the emergence of a non-American patent system in the future. This system is rooted in years of our independent development of equipment, followed by establishing proprietary processes and patent frameworks based on that foundation. For instance, we have effectively become the global leader in advanced multiple-exposure techniques.
Last year, Samsung purchased our domestically developed bonding equipment from our independent supply chain, which means they already know what’s coming next.




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This is an insane news to hear. The Chinese companies will double triple down on R&D when hearing news like this. Before I was thinking YMTC was stacking 2 decks due to american equipment restrictions. But thankfully that's not the case it seems.

And I know many have pointed out before, YMTC never seemed to raise issues about Lithography machine even though they were sanctioned much earlier in 2022 (was mostly about LAM etchers). This raises the question, what exactly is is YMTC doing when it comes to lithography machine.

I read somewhere that, once you get to 3D stacking, you don't even need leading edge lithography, just KrF is enough or something. If anyone has more insight, do share.

This also means if CXMT can get into 3D DRAM, they will not need EUVL in the near future! So many variables unless a domestic fully fledged lithography arrives!
 
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