Can you point out to which part of the article is trash or fake? I didn't see anything out of ordinary for me.
=> The Korean media is all trash media that shouts anti-Chinese sentiment and anti-communism. They make news about China facts, but end with negative news about China in the middle or at the end. That's why when you watch Korean media news, you end up with a negative perception of China.
“SK하이닉스 중국 공장에서 생산한 D램으로 장난친 것”
=> Playing with DRAM produced at SK Hynix’s Chinese factory
The above Korean article is a news article based on TechInsights. It is wiser to read the original TechInsights article.
We have posted TechInsights, but it is also very interesting to read the alarm on the subject from Korean chip makers. People seem to have no problem posting any number of Western articles on China's chip sector, despite the same negative propaganda.
Frankly, you have a lot of nerve as a new poster to lecture me on what can or can't be posted here.
GaO supply chain/ecosystem in China is really building up. You need multiple players to foster innovation.
Mingga Semiconductor successfully prepared 4-inch gallium oxide crystal for the first time.
Beijing Mingga Semiconductor Co., Ltd. has successfully produced a 4-inch gallium oxide crystal blank for the first time in the world. The successful gallium oxide crystal blank grew to a diameter of 4 inches and a thickness of 55 mm. After processing, the usable size is 3 inches and the thickness is up to 40 mm. Under the same process conditions, the more device chips are manufactured with gallium oxide, the lower the unit device chip manufacturing cost, and the more obvious the cost-effectiveness of gallium oxide.
This technological breakthrough not only optimizes the crystal growth environment, but also makes it possible to produce a crystal blank with a usable thickness greater than 40 mm. This is not only a technological breakthrough, but also promotes the development of the industry. Large-sized gallium oxide substrates can effectively reduce production costs, improve production efficiency, and accelerate the widespread application of gallium oxide materials in various fields.
As a fourth-generation semiconductor material, the cost of gallium oxide is about one-third of that of the third-generation semiconductor material silicon carbide. Its basic power devices have the characteristics of high voltage resistance and low loss. The products made from it have significantly improved energy efficiency and endurance performance. For example, in the field of new energy vehicles, the driving range of a car using gallium oxide devices on a single charge is 10% to 20% higher than that of a car using traditional silicon devices.
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