Chinese semiconductor thread II

[tokenanalyst]

4H-SiC Position-sensitive Detector Working in Extreme Ultraviolet Wavelength Band​

Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm × 6.5 mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of 63 μm, a low nonlinearity of 2.1% and a high position resolution of 8.5 μm. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.

Please, Log in or Register to view URLs content!

 

[tphuang]

Please, Log in or Register to view URLs content!

The first fully domestic RISC-V auto grade MCU will enter service this year. Likely with Dongfeng

 

[huemens]

TSMC cuts ties with Singapore firm over chip found in Huawei processor: sources​

Please, Log in or Register to view URLs content!

The world’s most advanced contract chipmaker has severed its ties with a Singapore-based company after a client review exposed a potential breach of US export controls, according to people familiar with the matter.

Taiwan Semiconductor Manufacturing Company (TSMC) ended its relationship with PowerAIR, a low-key Singaporean firm, following a client check triggered by the discovery of a TSMC chip in a Huawei Technologies artificial intelligence (AI) processor, three sources said.

The Post is unable to reach PowerAIR, which does not have an official website, nor any publicly-listed phone number or email address.

 

[tphuang]

Please, Log in or Register to view URLs content!

Silan announced it is getting into 8-inch SiC production. Goal could be as high as 25k wpm.

 

[huemens]

Samsung cuts NAND production in China amid revenue decline and price drop​

Please, Log in or Register to view URLs content!

Samsung adjusts NAND flash production strategy in response to persistent oversupply and declining prices

According to industry sources on the 10th, Samsung Electronics has set a policy to reduce the wafer input amount at its largest NAND production base, the Xi’an factory in China, by more than 10% compared to before. As a result, the wafer production at the Xi’an factory, which was averaging 200,000 units per month, is expected to decrease to about 170,000 units. Additionally, lines 12 and 17 in Hwaseong are also set to regulate their supply, leading to an overall downward adjustment in production capacity.

 

[tokenanalyst]

tic toc getting closer.

Fabrication and Characterization of Tio2 and Sio2 as Protective Coating for Mo/Si Multilayer by Ion Beam Sputtering​

Abstract​

Mo/Si multilayer mirrors have been widely used in extreme ultraviolet (EUV) astronomy, microscopy, and advanced lithography. To extend the lifetime of Mo/Si multilayer, the protective coating is important for actual application. In this paper, TiO2 and SiO2 have been chosen as the protective coating for Mo/Si multilayers. To investigate the fabrication process of TiO2 and SiO2 by ion beam sputtering (IBS), a comparative study on the choice of sputtering targets has been detailed conducted. Oxide monolayer samples were characterized by grazing incidence X-ray reflectivity (GIXRR), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The Mo/Si multilayer deposited with ultra-thin TiO2 and SiO2 protective coating was analyzed by transmission electron microscope (TEM) and angle-resolved XPS. The results indicated the protective coating has low surface roughness and the dioxide component is higher than 95%. The reflectivity of Mo/Si multilayer with and without protective coating have been measured at synchrotron radiation facility. The reflectivity drop was similar with theoretically calculation based on the precise thickness control.​

 

[tokenanalyst]

The domestic photoresist-precursors company plans to raise 1.2 billion yuan.​

According to recent news, last Friday, Hengkun New Materials, a key material company for 12-inch wafer manufacturing in Xiamen, had its IPO application on the Science and Technology Innovation Board approved.

Hengkun New Materials was established in December 2004 and is one of the few innovative companies in China that has the ability to develop and mass-produce key materials for 12-inch integrated circuit wafer manufacturing. According to its shareholder, Xiamen Industrial Investment Fund, Hengkun New Materials is the largest photoresist company in China in terms of shipment volume for advanced processes in 12-inch wafer manufacturing.

Its self-produced products mainly include SOC, BARC, KrF photoresist, i-Line photoresist and other photolithography materials and TEOS and other precursor materials, covering 128 layers and above 3D NAND, 18nm and below DRAM memory chips and 7-90nm technology node logic chips and other major products of the domestic integrated circuit industry.​

 

[tinrobert]

Higher Resolution:
View attachment 142974

Here is my latest article on these misaligned Sanctions in the semi space focusing on equipment, legacy chips, and AI.

Please, Log in or Register to view URLs content!

 

[tokenanalyst]

Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography.​

Abstract​

Background​ Traditional chemically amplified resists (CARs) often suffer from high line-edge roughness (LER), primarily due to acid diffusion and the uneven distribution of reactive components. Nonchemically amplified resists (n-CARs) emerge as a promising solution to overcome the limitations. Molecular glasses (MGs), a type of organic compounds known for their distinct and well-defined structures, are particularly noteworthy for their homogeneity. The innovative design of MG-based n-CARs represents a significant stride toward overcoming the limitations inherent in CAR systems.​ Aim​ Development and performance evaluation of n-CARs utilizing the multi-sulfonium modified triptycene molecule for advanced lithography techniques, such as electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL).​ Approach​ A multi-sulfonium modified triptycene (TPESF6TPESF6) was synthesized and characterized. This compound undergoes a photochemical reaction in which the sulfonium groups are transformed into thioethers, resulting in a substantial switch in polarity and thereby in solubility. The lithography performance of the TPESF6TPESF6 resist was evaluated by EBL and EUVL. The lithographic patterns were analyzed by scanning electron microscopy and atomic force microscopy.​ Results​ TPESF6TPESF6 resist demonstrated remarkable performance in EBL, achieving a 20 nm line/space (L/S) patterns as a negative-tone resist developed by water. Further evaluations using EUVL yielded an impressive 13 nm L/S pattern at a dose of 372.6mJ/cm2372.6mJ/cm2 with a very low LER of 1.8 nm. Mechanistic studies show that the change in solubility of TPESF6TPESF6 resist depends on the decomposition of the sulfonium cation and triflate anion groups.​ Conclusions​ The TPESF6TPESF6 molecular resist shows high resolution and low LER, as evidenced by tests conducted using both EBL and EUVL. The integration of MG resist characteristics with the concept of n-CARs significantly improves the resolution and reduces the LER, offering a promising pathway for high-performance materials for advanced lithography. Please, Log in or Register to view URLs content!

 

[huemens]

U.S. Chip Export Ban to China May Extend to 16nm Before Biden Leaves Office​

Please, Log in or Register to view URLs content!

Furthermore, industry sources indicate that the U.S. is expected to expand the scope of restricted processes, extending controls beyond the current 7nm advanced processes to include 16nm mature processes.