Chinese semiconductor thread II
- Thread starter vincent
- Start date
Several other companies in China can produce chips at 40nm including HLMC.
Does smic have inland fab, not coastal?
yes, but I think it's most likely going to be SMIC, since they have so much more capacity that seems to be attracting a lot of new customers.
Samsung Electronics' current difficulties lie in its serious yield issues.
First, the problems in the memory sector are as follows.
Another factor is the continued adherence to high-difficulty processes. Samsung Electronics is currently using the TC-NCF (Thermo Compression-Non Conductive Film) method to produce HBM. Unlike the existing bump technique, this method uses films to implement fine bonding, but it has the disadvantage of a complex manufacturing process and high costs. In particular, it is said to have limitations in that stability in high-speed operations and high-temperature environments is relatively low.
In contrast, competitors are producing HBM using the MR-MUF (Mass Reflow-Molded UnderFill) method, which implements precise bonding between chips using liquid underfill materials. It has relatively high yields and stability, and it meets the standards of customers such as NVIDIA. Recently, a competitor developed the world's first 16-layer HBM3E, and announced that it is also optimal to produce it using the MR-MUF method. This is the background to the evaluation that the reason Samsung Electronics lags behind its competitors in HBM technology is due to this production method.
The problems in the foundry sector are as follows.
Samsung Electronics attempted to gain a technological advantage by developing the world's first 3nm process, but failed to secure major customers due to yield issues. In particular, it is reported that the 3nm process using the gate-all-around (GAA) structure is more difficult than the existing FinFET process, making it difficult to stabilize the yield.
First, the problems in the memory sector are as follows.
Another factor is the continued adherence to high-difficulty processes. Samsung Electronics is currently using the TC-NCF (Thermo Compression-Non Conductive Film) method to produce HBM. Unlike the existing bump technique, this method uses films to implement fine bonding, but it has the disadvantage of a complex manufacturing process and high costs. In particular, it is said to have limitations in that stability in high-speed operations and high-temperature environments is relatively low.
In contrast, competitors are producing HBM using the MR-MUF (Mass Reflow-Molded UnderFill) method, which implements precise bonding between chips using liquid underfill materials. It has relatively high yields and stability, and it meets the standards of customers such as NVIDIA. Recently, a competitor developed the world's first 16-layer HBM3E, and announced that it is also optimal to produce it using the MR-MUF method. This is the background to the evaluation that the reason Samsung Electronics lags behind its competitors in HBM technology is due to this production method.
The problems in the foundry sector are as follows.
Samsung Electronics attempted to gain a technological advantage by developing the world's first 3nm process, but failed to secure major customers due to yield issues. In particular, it is reported that the 3nm process using the gate-all-around (GAA) structure is more difficult than the existing FinFET process, making it difficult to stabilize the yield.
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Chinese DRAM threatens K-memory with quantity offensive. DDR5 also close Behind
Have been following CXMT for the longest of time and for quite a while (2019-2022) they were not making a lot of headlines unlike YMTC. But looks like that's changing rapidly in last 2 years or so. They just started LPDDR5 one year ago and according to this report now they are mass producing DDR5 too. This is an amazing feat considering DDR5 started to come to mainstream products just 1 or 2 years ago (depending on AMD or Intel). I do not have much idea about the process node on their DRAM's if someone else can shade light onto it. The process node on DRAM is more funky with 1x 1z etc unlike Logic nodes.
I am quite certain this company will come to entity list sooner then later because they are starting to threaten Micron in the DRAM space. But just hope they are placing large amount of orders (and getting them into warehouse) from top suppliers like AMAT, LAM, KLA & ASML before the sanction hits. They are also planning to make a fab in Shanghai for HBM Packaging and so on.