The rapid development of artificial intelligence urgently requires high-speed non-volatile storage technology. The current mainstream non-volatile flash memory has a programming speed of hundreds of microseconds, which cannot support application needs. The preliminary research
of the Zhou Peng-Liu Chunsen team at Fudan University showed that two-dimensional semiconductor structures can increase the speed by more than a thousand times, achieving disruptive nanosecond-level ultra-fast storage flash memory. However, how to achieve large-scale integration and move towards practical application is extremely challenging.
Starting from interface engineering, the team verified the integration verification of 1kb ultrafast flash memory array for the first time in the world, and proved that the ultrafast characteristics can be extended to sub-10 nanometers. At 5 pm Beijing time on August 12, the relevant results were published in the international top journal Nature
Electronics under the title " A scalable integration process
for ultrafast.
The team developed super-interface engineering technology, realized heterogeneous interfaces with atomic-level flatness in large-scale two-dimensional flash memory, and combined with atomic-level precision characterization technology, verified that the integrated process is significantly better than the international level. Through strict DC storage window and AC pulse storage performance tests, it was confirmed that the yield of two-dimensional flash memory is as high as 98% at nanosecond non-volatile programming speed in a 1Kb storage scale, which is higher than the 89.5% yield requirement for flash memory manufacturing in the International Technology Roadmap for Semiconductors.
At the same time, the research team developed a self-aligned process that does not rely on advanced lithography equipment. Combined with the original innovative ultrafast storage stacked electric field design theory, they successfully realized an ultrafast flash memory device with a channel length of 8 nanometers, which is currently the shortest channel flash memory device and has broken through the physical size limit of silicon-based flash memory (about 15 nanometers). Supported by an atomically thin channel, this ultra-small device has 20 nanosecond ultrafast programming, 10 years of non-volatility, 100,000 cycle life, and polymorphic storage performance. It is expected to promote the industrialization of ultrafast disruptive flash memory technology.