New product launch in Wuxi 2024
(1) Suzhou Xinrui Technology Co., Ltd. - Introduction to 12-inch bonding and debonding equipment
(2) Suzhou Ecoris Intelligent Equipment Co., Ltd. - Nano-scale chip-to-wafer high-precision hybrid bonding equipment
( 3) Shanghai Microelectronics Equipment (Group) Co., Ltd. - SOI800 series fully automatic optical defect detection equipment
(800 refer to SMEE ArF immersion lithography machines series) while the (600 series will stay as SMEE dry lithography machines)
(4) Wenxian Microelectronics Co., Ltd. - Automotive-grade high-side driver switches and energy chain semiconductor solutions
(5) Wuxi Yiwen Electronic Technology Co., Ltd. - third-generation semiconductor eight-inch thin film etching equipment
(6) Yanwei (Jiangsu) Semiconductor Technology Co., Ltd. - (High-yield) High-K ALD thin film deposition equipment
(7) Jiaxing Jingyan Intelligent Equipment Technology Co., Ltd. - High-density ultra-thin chip stacking die bonding machine
(8) Jiaxing Qingting Optoelectronics Co., Ltd. - Wirebond 3D AOI
(9) Shenyang Heyan Technology Co., Ltd. – Wafer grinding machine
(10) Ridong Intelligent Equipment Technology (Shenzhen) Co., Ltd. - IC bonding machine WBD2200 Plus
(11) Zhisiyuan Integrated Circuit Design (Wuxi) Co., Ltd. - medium and high voltage power supply and driver chips
(12) Jiangsu Leibo Microelectronics Equipment Co., Ltd. - New self-made Aligner lithography machine
(13) ACM Semiconductor Equipment (Shanghai) Co., Ltd. – Front-end coating and development Track equipment
(officially)
(14) Jiangsu Microguide Nanotechnology Co., Ltd. - iTomic® MW series batch atomic layer deposition coating system
(officially)
(15) Robei (Wuxi) Microelectronics Co., Ltd. – Independent and controllable high-performance general-purpose computing chips
The 12th (2024) China Electronic Specialty Equipment Industry Association Semiconductor Equipment Annual Conference & Industry Chain Cooperation Forum and the 12th (2024) Semiconductor Equipment & Core Components Showcase (CSEAC), will be held in September at the Taihu International Expo Center in Wuxi, Jiangsu Province. The scale of exhibitors this time far exceeds that of previous years. Six pavilions are expected to be opened. The equipment and components on display include wafer fabrication equipment, packaging equipment, inspection and testing equipment, materials, software and core components, assembly equipment, plant facilities, pollution control and other areas, forming a full industry chain and full category coverage.
EUV FEL is in Dalian.There is a EUV FEL in Shenzhen dedicated to lithography.
Is there some fundamental barrier that prevents moving from EUV to even shorter wavelengths like X-rays in lithography? Is the difficulty with optics? I know that EUV had to use mirrors for optics instead of lenses.Lithography will run out of steam and the industry is close to give up on lithography scaling ( shrink ). Dram will go 3D in few years. Sram will be stacked. Materials and DTCO is the way forward.
Problem with euv is that photoresist are not well developed. FEL light source won't reduce stochastics and coherent light does not offer any advantage. On the other hand difficulty to operate a particle accelerator in an industrial setting is understated. They are not reliable at all.FEL will come faster than many people think probably in the next 5 years or less. LPP is like the big inefficient mercury lamps that excimer lasers replaced. Problem with current ASML EUV systems apart from stochastics is power which affect throughput, FEL EUV could increase throughput to the level of ArFi scanners or even higher.
Photons are way too energetic. Resist outgassing is a huge problem. Photomask may not survive the damage. All in all lithography will run out of steam. ASML will continue to fine tune and upgrade the machines but the idea of a big technological jump is impossible. Samsung is planning 3D DRAM starting production in early 2030s. Embedded systems will introduce MRAM. I doubt leading edge logic really wants to beat such high costs of lithography based scaling. They will focus on cfet and 2D materials.Is there some fundamental barrier that prevents moving from EUV to even shorter wavelengths like X-rays in lithography? Is the difficulty with optics? I know that EUV had to use mirrors for optics instead of lenses.
“A few days ago, I heard something truly starting from BYD Exec Li Yunfei”i wrote up a substack entry on BYD semiconductor unit and how it is just huge
But will increase power without increasing cost too much increasing throughput. In fact, it could also reduce stochastic, I think the biggest with ASML EUV machines is that they are underpowered to achieve enough contrast in the photoresist and ASML has to do this delicate balance between throughput and pattern quality as seen in some research done using synchrotron EUV radiation.Problem with euv is that photoresist are not well developed. FEL light source won't reduce stochastics and coherent light does not offer any advantage.
One the reason is because most FEL are built for multiple experiments in mind they have more hardware that would be required for EUVL, reducing unnecessary hardware would reduce size and cost. Also the same could have been said about mercury vapor lamps and excimer lasers which are notoriously difficult to make, expensive and very unreliable <Compared to others light sources> when they started to be used in lithography and still today to the point that only three companies can make excimer lasers for lithography, US Cymer, Japan Gigaphoton and China RSLaser.On the other hand difficulty to operate a particle accelerator in an industrial setting is understated. They are not reliable at all.
I would agree that dimensional scaling is over, but throughput needs to increase significantly before going to methods that would require more patterning steps or cost are going to eat the industry.Photons are way too energetic. Resist outgassing is a huge problem. Photomask may not survive the damage. All in all lithography will run out of steam. ASML will continue to fine tune and upgrade the machines but the idea of a big technological jump is impossible. Samsung is planning 3D DRAM starting production in early 2030s. Embedded systems will introduce MRAM. I doubt leading edge logic really wants to beat such high costs of lithography based scaling. They will focus on cfet and 2D materials.