The standardization of the production of this type material for lithography by Chinese companies and institutions. The commercialization of EUV lithography is ongoing. Biggest China Quartz company.
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Chinese semiconductor thread II
- Thread starter vincent
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new progress! Daquan Energy Semiconductor Grade Polysilicon Products Released
Recently, the first batch of products from Daqo Energy’s semiconductor grade polysilicon project was released. The general manager of Inner Mongolia Daqo Semiconductor Co., Ltd. said that the release of the first batch of products shows that the semiconductor project process has been completely opened up, and the next step will be to complete quality ramping and product classification verification as soon as possible. It is understood that integrated circuits are the basic content of the development of the information industry and a pillar industry for my country's strategic development. It plays an important role in promoting the normal development of my country's new economy. With the development of my country's integrated circuits, the market scale continues to expand, but the self-service supply rate of the industry is relatively low, which is not conducive to the development of the national economy. Therefore, it is necessary to promote the development of the integrated circuit industry.
The current development of integrated circuits and semiconductors uses polysilicon as the main material. Currently, electronic-grade polysilicon has become an upstream industry content in the development of the integrated circuit industry. The purity requirements of electronic-grade polysilicon are extremely high, and it is the purest substance that can be obtained by human industrialization. Due to the continuous advancement of integrated circuit manufacturing processes, the requirements for the purity and stability of polysilicon raw materials are also increasing. For a long time, the global electronic-grade polysilicon has been monopolized by a few companies in the United States, Japan and Germany, and the domestic market has long relied on imports.
Since its establishment in 2011, Daqo Energy has closely focused on the national new energy strategic plan, relying on continuous R&D investment and technological innovation, combined with the advantages of low-cost energy and the advantages of being located in the silicon industry base cluster, and has been focusing on the R&D and production of high-purity polysilicon. and sales. The company is currently one of the major market players in the polysilicon industry. Semiconductor-grade polysilicon has higher purity requirements than solar-grade polysilicon. Daqo Energy relies on years of technology accumulation in the field of high-purity polysilicon to horizontally expand semiconductor-grade polysilicon projects and promote the localization process of semiconductor polysilicon. In 2021, Daqo Energy plans to build a 200,000-ton high-purity polysilicon project and a 21,000-ton semiconductor-grade silicon-based material project in Baotou City, Inner Mongolia Autonomous Region, with an estimated total investment of 24.25 billion yuan. Among them, the first phase of the semiconductor-grade polysilicon project with an annual output of 1,000 tons covers an area of about 135 acres. Construction will officially start in the second quarter of 2022, and Inner Mongolia Daqo Semiconductor Co., Ltd. will be established in September 2023 for independent operations.
The greater takeaway is they have a kill switch for that f-ing thing. It doesn't take a war. They could shut that thing down if they don't like you for whatever reason.
Pay nearly $400M for something that will forever be an internal threat.
It might actually be a silver lining that leading Chinese fabs never imported the thing.
Imagine never developing your own EUV and having your industry rely on a machine that your rivals can turn into a brick overnight.
The total investment exceeds 1.4 billion yuan, and the Yirui Technology Headquarters and R&D Center project is capped
On May 21, the headquarters and R&D center project of Shanghai Yirui Optoelectronic Technology Co., Ltd. (hereinafter referred to as "Yirui Technology") was capped. Official news from Yirui Technology shows that this also means that it is one step closer to the goal of comprehensive completion of the project by the end of the year .
According to reports, the project is located in Zhangjiang Science City, Pudong New Area, Shanghai, with a total investment of more than 1.4 billion yuan and a total construction area of more than 70,000 square meters. The project will greatly upgrade the company's supporting facilities, create a better R&D and working environment, and develop advanced technologies and products including CMOS detectors, CT detectors, TDI detectors, SiPM detectors, CZT photon counting detectors and detector chips. R&D , continue to recruit and attract outstanding innovative talents, enhance team strength, accelerate the transformation of scientific and technological achievements, enhance the power of sustainable development, and lay a solid foundation for Yirui to grow into the world's leading supplier of digital X-ray imaging components and comprehensive solutions. Base.
Founded in 2011, Yirui Technology is mainly engaged in the research and development, production, sales and service of X-ray core components, mainly digital X-ray detectors. Through technology absorption and independent innovation, Yirui Technology has become one of the few detector companies in the world that masters amorphous silicon, oxide, flexible substrate, and CMOS technology routes at the same time, and can provide hardware, software, and complete imaging chain comprehensive solutions.
Dongfeng Motor: Zhixin Semiconductor’s second production line is expected to be put into mass production in July
On May 22, Dongfeng Motor issued a document stating that Zhixin Semiconductor, a joint venture between Dongfeng and CRRC, carried out independent research, developed and produced automotive-grade IGBT modules, and successfully achieved mass production of IGBT products, with a first-phase production capacity of 300,000 units. The production of 400V silicon-based IGBT modules reduces the price by 50% compared with foreign products, achieving a breakthrough in domestic IGBT modules from scratch.
Zhixin Semiconductor’s second production line has been put into operation in April this year, with a planned production capacity of 400,000 units. It is compatible with the production of 400V silicon-based IGBT modules and 800V silicon carbide modules. The localization rate of the production line has reached 70%. It is expected to be put into mass production in July. Zhixin Semiconductor's 800V silicon carbide modules have been put into use in large quantities every month. They adopt nano-silver sintering technology and copper bonding technology. They have better heat dissipation performance, stronger voltage resistance, and a 3% increase in energy conversion efficiency.
Ultralow-expansion-coefficient fluoridized quartz glass and preparation method thereof
Chuangsheng Optoelectronic Technology Suzhou Co ltdAbstract
The invention discloses fluorinated quartz glass with an ultralow expansion coefficient and a preparation method thereof, wherein the preparation method comprises the steps of preparing TiO firstly 2 ‑SiO 2 Composite material, and the obtained TiO is recycled by using fluorine source 2 ‑SiO 2 The composite material is subjected to fluorination treatment and pressed into a dense blank, and finally the dense blank is sequentially subjected to vitrification sintering treatment, so that the prepared fluorinated quartz glass has extremely low thermal expansion coefficient, the expansion coefficient is smaller than 5 multiplied by 10 < -8 >/K, and the fluorinated quartz glass can be used as a mirror base material in EUV lithography. The preparation method can prepare extremely-pure fluoridized quartz glass with ultra-low expansion coefficient, the total amount of transition metal impurities is controlled within 1ppm, and the content and purity of the transition metal impurities in the raw materials can be improved by purification.
Comprehensively meet the needs of third-generation semi-mass production, SRII discusses the 2024 Jiufengshan Forum
Recently, the 2024 Jiufengshan Forum and China International Compound Semiconductor Industry Expo ("JFSC&CSE") was held at the Wuhan Optics Valley Technology Convention and Exhibition Center. As the highlight of this exhibition, the Jiufengshan Forum ("JFSC") adopts a "1 main and 8 specialized" industry forum, focusing on compound semiconductor key materials, compound semiconductor core equipment, etc., with a think tank team led by domestic and foreign academician-level experts to chat. Industry trends.
Sirui Intelligent was invited to attend this conference and shared its atomic layer deposition and ion implantation solutions for SiC/GaN applications at a parallel forum with the theme of "Power Compound Semiconductor Core Equipment".
Chen Xianglong, the company's deputy general manager, said in his speech: "It is urgent to seize the strategic opportunity period of the third generation wide bandgap power semiconductors and realize independent controllability of semiconductor equipment. Sirui Intelligent has always focused on and actively developed the application fields of new processes. With the dual-track layout of ALD+IMP, we will accelerate the mass production and application expansion of third-generation semiconductors.”
ALD solutions: enabling GaN and SiC device performance improvements
In response to common interface problems in GaN, Sirui Intelligent provides a set of three-step solutions based on its profound technical accumulation and rich experience accumulated on the client side. This solution can improve the dynamic performance of GaN devices and reduce the hysteresis of the devices. It has now passed mass production verification by well-known companies in the GaN field at home and abroad.
The superiority of ALD is also reflected in the SiC gate oxide structure. Especially in the manufacturing of trench-type SiC devices, the traditional thermal oxidation method has many limitations. For example, the precipitation of carbon clusters at the SiO 2 /SiC interface causes the electron mobility to be far lower than the theoretical value. , Problems such as reduced gate oxide reliability under high temperature and high pressure. Sirui Intelligent applies ALD technology, especially in response to the current trend of SiC transition from planar structure to trench structure, to provide a high conformality and high density coating deposition solution, successfully solving the problem of uneven thickness of thermal oxidation on 3D structures. The problem of inconsistent electrical properties.
SiC trench structure performance significantly improved, a new breakthrough in ion implantation applications
Ion implantation is a common technique for adjusting the electrical characteristics and device performance of power semiconductors. The industry is facing the challenge of improving the efficiency of ion implantation. In order to minimize the damage to the lattice caused by ion bombardment, SiC ion implantation is usually performed at high temperatures. At the same time, since SiC is difficult to thermally diffuse, higher energy is required to achieve a specific depth of implantation. SiRui Intelligent provides a series of high-energy, large-beam ion implantation equipment to ensure efficient ion implantation.
Since the trench structure can effectively reduce the on-resistance and switching losses, further improving the cost-effectiveness of SiC devices, the SiC structure is currently changing from planar to trench. Regarding the new requirements for ion implantation put forward by the SiC trench structure, Chen Xianglong said: "In the trench structure, ion implantation requires up to 2MeV energy, which mainly relies on high-energy implanters to achieve implantation. Sirui intelligent high-energy ion implanters use radio frequency Acceleration technology and single-wafer transmission mode, the energy can reach up to 8M. At the same time, Sirui Intelligent has also developed a 4.5M high-energy ion implantation model. ”
It is worth mentioning that in the second half of 2024, Sirui Intelligent will launch two ion implanters: the high-energy SiC ion implanter SRII-4.5M SiC and the large-beam SiC ion implanter SRII-200 SiC. Fully meet SiC mass production needs.
Only people who don’t know how electronics equipment works believe that you can do perma-kill switches.
Rather than "kill switches", isn't ASML merely implying that the machine needs servicing and they can simply refuse to do so if necessary?