HiMachines successfully develops 12-inch silicon carbide single crystal ingot
Against the backdrop of the rapid development of the silicon carbide industry, Hymuchip has continued to promote technological innovation. Following the achievement of controlling the defect rate below a stable value in the 8-inch silicon carbide crystal growth process, it has recently made another major breakthrough - successfully developing a 12-inch diameter silicon carbide single crystal ingot , marking that the company has achieved full independent control over the 6, 8 and 12-inch full-size crystal growth technology chain.
After achieving stable and controllable 8-inch crystal growth technology, Hymchip Microelectronics significantly reduced crystal growth costs by improving thermal field lifetime and reducing power consumption . Increasing substrate size is a key factor in driving industrial scaling and cost control. Simultaneously, the company rapidly focused on the research and development of larger-size crystal growth technologies, successfully overcoming the bottleneck of 12-inch growth technology through technological iterations in key areas such as thermal field design, voltage division, temperature control, and growth processes .
The growth of 12-inch silicon carbide crystals presents more complex thermal gradients and radial temperature fields within the crystal, and the increased stress severely restricts the fabrication of large-size, high-quality SiC single crystals. Haimu Microelectronics, relying on its independently developed resistive crystal growth equipment and continuously iterating process technology, has effectively ensured the stable growth of large-size crystals through innovative temperature field design and iterative control of crystal integrity. The ingots prepared this time exhibit excellent crystal quality and complete structure, fully demonstrating the company's dual breakthroughs in core technologies and processes.
This technological breakthrough is a testament to Hymchip's continuous investment in the silicon carbide field, demonstrating the company's firm commitment to technological innovation and industrialization. Hymchip will address key challenges such as crystal growth and substrate processing, overcoming technological barriers to build core competitiveness through continuous technological innovation and drive the company's sustainable development.
