Chinese semiconductor thread II

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Equipment solutions of Shanxi CETC SiC industry chain​


Horizontal SiC Chemical Vapor Deposition Furnace

MTS is used as the precursor raw material, which is brought into the mixing tank by bubbling or evaporation, and Ar and H2 are used as mixed gases to perform CVD coating on the surface of graphite or SiC substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 100±10μm; the purity is ≤1ppm; the silicon-carbon ratio is 1:1, and all the indicators of the coating meet the semiconductor requirements.

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Vertical SiC Chemical Vapor Deposition Furnace

MTS is used as the precursor raw material, which is brought into the mixing tank by bubbling or evaporation, and Ar and H2 are used as mixed gases to perform CVD coating on the surface of graphite or SiC substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 100±10μm; the purity is ≤1ppm; the silicon-carbon ratio is 1:1, and all the indicators of the coating meet the semiconductor requirements.

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TaC vapor deposition furnace
Using TaCl5 and CH4 mixed gas as precursor raw materials, Ar and H2 as mixed gas, CVD coating is performed on the surface of graphite substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 40±5μm; purity: ≤5ppm; tantalum-carbon ratio: 1:1, and all coating indicators meet the needs of semiconductor, aerospace thermal protection, medical equipment and other industries.

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Pyrolytic graphite vapor deposition furnace

Using CH4 as the precursor raw material, Ar and H2 as the mixed gas, CVD coating is performed on the surface of the graphite substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 60±5μm; purity: ≤1ppm; thermal conductivity: 376W/m·K (a) 2.0W/m·K (c). All indicators of the coating meet the requirements of semiconductors, rocket throat linings, OLED industry evaporation vessels,
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Vertical high temperature purification furnace

It is mainly used for the purification and directional element removal of carbon-based materials such as graphite, insulation felt, and graphite powder. It adopts resistive heating, and achieves 2400-degree high-temperature heating through infrared thermometer and temperature control module. It can achieve high-purity treatment of carbon-based materials with purification process. The equipment has good purification effect, high degree of automation, and reliable and stable performance.

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Kangxinwei completed the B round of financing of tens of millions of yuan​


Recently, Hefei Kangxinwei completed a B round of financing of tens of millions of yuan, and the investor in this round was Junsheng Investment. Kangxinwei completed the A and A+ rounds of financing in 2022-2023, totaling 322 million yuan, and introduced strategic investors such as CITIC New Future, Xicheng Zhiyuan, Science City Venture Capital, Guoyuan, CITIC Construction Investment, Zhuoyuan Asia, and Huaan Jiaye.

According to information, Kangxinwei was established in 2018 and is headquartered in the Economic and Technological Development Zone of Hefei City, Anhui Province. It is a domestic manufacturer of embedded storage master chips and storage modules.
Kangxinwei's business scope covers the research and development, production and sales of storage master control chips and storage modules. Its current main products are eMMC embedded storage master control chips and modules.

Kangxinwei takes storage master control technology as its core and provides one-stop solutions and OEM/ODM solutions. In addition to consumer-grade products, the company's self-developed aftermarket automotive-grade storage and industrial-grade storage are also vigorously expanding customers. The company's self-developed UFS storage will also be gradually launched into the market.

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