Chinese semiconductor industry
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We'll see what comes of this. This is the most interesting development in recent times in EU-China trade relations - all that talk from Macron is just that, talk. If the EU goes ahead with this ban & the EV tariffs, I expect Beijing will begin treating the EU like the US in terms of risk assessments for high technology, which doesn't surprise me as I've always said the Europeans will side with the US in the end due to Western solidarity.
NAURA's "Semiconductor Process Equipment and Its Process Control Method" Patent Announcement
According to information from the National Intellectual Property Bureau, Beijing North Huachuang Microelectronics Equipment Co., Ltd. announced the patent of "semiconductor process equipment and its process control method". The application publication date is June 13, and the application publication number is CN116254514A.The application discloses a semiconductor process equipment and a process control method thereof, which solves the problem that the temperature of the semiconductor process cannot be effectively controlled and the reliability of the semiconductor process equipment is affected when the temperature measuring device is abnormal. Including: obtaining the first temperature and the second temperature of the carrier built in the process chamber in the semiconductor process equipment; judging whether the second temperature is abnormal; if it is determined that the second temperature is normal, then determining that the semiconductor process equipment is in the normal mode; in the normal mode , the real-time heating power is determined by the temperature control device according to the second temperature and the preset stable temperature; the real-time temperature of the carrier platform is monitored by the control device according to the first temperature; if it is determined that the second temperature is abnormal, it is determined that the semiconductor process equipment is in an abnormal mode ; In the abnormal mode, the real-time heating power is determined by the control device according to the first temperature and the preset stable temperature; the real-time heating power is sent to the temperature control device; the temperature control device is used to control the heating device based on the real-time heating power to heat the carrier.It is reported that the purpose of the embodiments of the present application is to provide a semiconductor process equipment and its process control method to solve the problem that the existing semiconductor process cannot effectively control the temperature when the temperature measuring device is abnormal, thereby affecting the reliability of the semiconductor process equipment.
A total of nearly 1.1 billion yuan! Added 2 more SiC projects.
MOPI Semiconductor:660 million yuan, 20 production lines
On June 8, according to the official Weibo news of "Suining County Financial Media Center", the No. 1 plant of the first phase of the third-generation semiconductor device project under Jiangsu Mopai Semiconductor has been renovated and is currently undergoing equipment positioning, installation and debugging .
It is reported that the total investment of the project is 660 million yuan , of which the first phase investment is 260 million yuan, and 20 new third-generation semiconductor packaging and testing production have been installed. Fully automatic die bonding machines, fully automatic test sorting machines, fully automatic There are a total of 150 turret-type test all-in-one machines, and follow-up equipment will be ordered one after another.
Zhou Yuexian, general manager of Mopai Semiconductor, said that the project has a total of 6 factories with a total of more than 50,000 square meters. The first phase of the 3 factories with an area of more than 28,000 square meters will all be dust-free and finely decorated. The second phase of the project is planned to start at the end of 2023 .
This month, the decoration of 3 factories will be completed and put into use. It is estimated that the annual output of IGBT chips will be 2 billion , and the annual output value will be 720 million yuan. After the factory is officially put into operation, it will also produce high-power MOS, gallium nitride, and silicon carbide modules .
Beiyi Semiconductor:
SiC Power Modules for Debugging
On June 16, according to the "Heilongjiang Daily", Beiyi Semiconductor is stepping up the final debugging of the self-developed new generation of silicon carbide power semiconductor modules; in addition, their second phase project has been put into production, and the production capacity will be further expanded this year . 400 million yuan of domestic and foreign orders have been signed.
It is reported that the total investment of the project is 430 million yuan , which will be constructed in two phases. The second phase, as a provincial key project, was put into operation in January this year, with a total investment of 350 million yuan. The plant covers an area of more than 12,500 square meters. There are 5 new modern production lines, which can produce 9.5 million IPM, IGBT, and silicon carbide modules annually . Only 100,000 pieces of 8-inch wafers are mainly used in white goods, industrial manufacturing and new energy vehicles.
Jin Xing, head of Beiyi Semiconductor Procurement Department, said, "Our engineers are stepping up the final debugging of the self-developed new generation of silicon carbide power semiconductor modules . This technology has broken the technology monopoly of foreign countries and is of great importance to the country's development of 5G power supply, electric power , railway transportation, aviation and other industrial fields can play an important role.”
Founded in October 2017, Beiyi Semiconductor is headquartered in Pingshan District, Shenzhen. It is a national high-tech enterprise integrating R&D, production, packaging, testing, marketing and service of power semiconductor devices.
In May of this year, Beiyi Semiconductor completed a B-round financing of over 150 million yuan . This round of financing was led by Co-Stone Capital, and participating investors included Unicom Zhongjin and Qingdao Yujie. The financing funds will be used for the R&D and promotion of high-end power semiconductor chips and module products represented by SiC and IGBT.
Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method
Abstract: High thickness uniformity and large-scale films of α-Ga2O3 are crucial factors for the development of power devices. In this work, a high-quality 2-inch α-Ga2O3 epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method. The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga2O3 films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position (z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C. When the growth temperature exceeded 560 °C, ε-Ga2O3 was observed to form at the edges of 2-inch sapphire substrate. Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum (FWHM) of the rocking curves for the (0006) and (10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 106 and 3.9 × 1010 cm-2, respectively. Furthermore, the bandgaps and optical transmittance of α-Ga2O3 films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.
A long time ago Chinese capital investment funds tried to purchase Micron. The US government balked at it and forbade the investment. Micron has since systematically acquired ailing Asian memory businesses for a song, from Inotera in Taiwan, to Elpida in Japan, and Rexchip once again in Taiwan. They did this to prevent Chinese investors from getting access to the patents and know how required to manufacture memory chips. In most of those cases these acquisitions make zero financial sense for Micron except when seen through a lens of stifling competition. Chinese memory manufacturers were thus forced to develop their own products from scratch. For example JHICC did this by setting up a deal with Taiwanese UMC. UMC hired former workers from Inotera, which were fired when it was acquired by Micron, to design their memory products. Then Micron claimed these workers stole "their" IP and used the US government to attempt to kill JHICC by preventing them from acquiring or servicing the tools used to make memory chips. It is also pretty obvious they have been behind US government persecution of CXMT and YMTC.
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