The research team of Liu Xinke from Shenzhen University has developed a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate
Recently, the team of researcher Liu Xinke from the School of Materials Science and Engineering of Shenzhen University has made a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate, using AlN cut-off layer and SF6-based etching gas to achieve self-termination etching technology. Compared to Si-based HEMTs, GaN on GaN HEMTs have higher current density, lower low subthreshold swing, lower leakage current, and lower static and dynamic resistance due to lower dislocations and defects in homoepitaxy. At the same time, this work also tested the stability and uniformity of Vth at a high temperature of 175 °C. Compared with the breakdown voltage of Si-based HEMT of 507V, the breakdown voltage of GaN on GaN HEMT can reach 683V, and the normally-off AlGaN/GaN HEMT on the self-supporting GaN substrate shows great potential in power device applications.
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H.-C. Wang et. al., “High performance normally-off operation p-GaN gate HETM on free-standing GaN substrate,” IEEE Transactions on Electron Devices, vol. 69, no. 9, pp.4859-4863 , 2022