Chinese semiconductor industry

Status
Not open for further replies.

tokenanalyst

Brigadier
Registered Member
Maybe they produce on license, because it is very similar to this one with the same name made by NEXX

Please, Log in or Register to view URLs content!

NEXX is a US company acquired first by Tokyo Electron in 2012 and then sold to ASMPT in 2018

Please, Log in or Register to view URLs content!

ASMPT seems to be a Singaporean company

Please, Log in or Register to view URLs content!

So not clear what Shengying Semiconductor actually is. I was not able to find their site.


Anyhow this kind of machine (electroplating) is already in ACM Research portfolio:

Please, Log in or Register to view URLs content!
ASMPT? ASM pacific? that is Singaporean company?
 

tokenanalyst

Brigadier
Registered Member
TOOLS, TOOLS , TOOLS. The Taiwanese model of just building fabs and shrinking nodes is not longer sustainable for China electronic industry, if rely on tools and services that can disappear with the stroke of a pen. The focus should be on tools. The goal should be 28nm+ with close to 100% local or at least controllable tools as possible. Luckily the slowdown of Moore's law would allow such tools to evolve faster. That doesn't mean that they shouldn't invest in the cutting edge, they should but not doing it blindly.
 
Last edited:

tokenanalyst

Brigadier
Registered Member

The research team of Liu Xinke from Shenzhen University has developed a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate​


Recently, the team of researcher Liu Xinke from the School of Materials Science and Engineering of Shenzhen University has made a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate, using AlN cut-off layer and SF6-based etching gas to achieve self-termination etching technology. Compared to Si-based HEMTs, GaN on GaN HEMTs have higher current density, lower low subthreshold swing, lower leakage current, and lower static and dynamic resistance due to lower dislocations and defects in homoepitaxy. At the same time, this work also tested the stability and uniformity of Vth at a high temperature of 175 °C. Compared with the breakdown voltage of Si-based HEMT of 507V, the breakdown voltage of GaN on GaN HEMT can reach 683V, and the normally-off AlGaN/GaN HEMT on the self-supporting GaN substrate shows great potential in power device applications.
1665575041766.png
H.-C. Wang et. al., “High performance normally-off operation p-GaN gate HETM on free-standing GaN substrate,” IEEE Transactions on Electron Devices, vol. 69, no. 9, pp.4859-4863 , 2022

Please, Log in or Register to view URLs content!
 

olalavn

Senior Member
Registered Member

The research team of Liu Xinke from Shenzhen University has developed a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate​


Recently, the team of researcher Liu Xinke from the School of Materials Science and Engineering of Shenzhen University has made a high-performance normally-off PGaN gate HEMT on a self-supporting GaN substrate, using AlN cut-off layer and SF6-based etching gas to achieve self-termination etching technology. Compared to Si-based HEMTs, GaN on GaN HEMTs have higher current density, lower low subthreshold swing, lower leakage current, and lower static and dynamic resistance due to lower dislocations and defects in homoepitaxy. At the same time, this work also tested the stability and uniformity of Vth at a high temperature of 175 °C. Compared with the breakdown voltage of Si-based HEMT of 507V, the breakdown voltage of GaN on GaN HEMT can reach 683V, and the normally-off AlGaN/GaN HEMT on the self-supporting GaN substrate shows great potential in power device applications.
View attachment 99277
H.-C. Wang et. al., “High performance normally-off operation p-GaN gate HETM on free-standing GaN substrate,” IEEE Transactions on Electron Devices, vol. 69, no. 9, pp.4859-4863 , 2022

Please, Log in or Register to view URLs content!
China is the challenger of U.S sanction... it seems they are handling sanction very smoothly, from semiconductor to SiC...
 

theorlonator

Junior Member
Registered Member
TOOLS, TOOLS , TOOLS. The Taiwanese model of just building fabs and shrinking nodes is not longer sustainable for China electronic industry, if rely on tools and services that can disappear with the stroke of a pen. The focus should be on tools. The goal should be 28nm+ with close to 100% local or at least controllable tools as possible. Luckily the slowdown of Moore's law would allow such tools to evolve faster. That doesn't mean that they shouldn't invest in the cutting edge, they should but not doing it blindly.
Yeah but are the Taiwanese smart enough to get this? Hard to tell.
 
Status
Not open for further replies.
Top