Hongguang Semiconductor and GCL Group cooperate to develop the application of GaN power chips in the field of new energy
According to the strategic cooperation framework agreement, Hongguang Semiconductor and GCL Group intend to carry out close cooperation in the application of gallium nitride (GaN) power chips in the field of new energy, including: GCL Group or its subsidiaries will invest in Hongguang Semiconductor or its subsidiaries. Equity, the two parties will establish in-depth cooperation; the two parties will establish a new energy joint venture company in China to lay out the application of GaN chips in the new energy field, including but not limited to charging/exchange technology and equipment, energy storage technology and its facilities, distributed photovoltaic inverters devices, etc.; Hongguang Semiconductor will provide technical support to the joint venture to jointly develop silicon-based power chips and third-generation semiconductor applications; and GCL Group, based on its leading position and comprehensive layout in the new energy industry, will assist Hongguang Semiconductor and joint ventures to enter the new energy industry supply chain market.