Google translation for above olalavn post on EUV lithography :
Conductor discloses patent for exposure imaging structure, reflective photomask set and projection lithography machine for EUV lithography
The website of the State Intellectual Property Office recently published the invention patent application of Shanghai Chuanxin Semiconductor Co., Ltd. "exposure imaging structure, reflective photomask set and projection lithography machine".
According to the patent specification, the invention provides an exposure imaging structure, a reflective photomask set and a projection lithography machine for EUV lithography. The exposure imaging structure includes a first reflective photomask and a second reflective photomask The stencil, after the exposure light passes through the first reflective photomask, the reflected light with the graphic information of the first reflective photomask is reflected to the second reflective photomask by the reflective device, so that the second reflective photomask is emitted from the second reflective photomask. The light reflected by the reticle simultaneously includes a combined projection pattern of the first reflective mask pattern and the second reflective mask pattern, so as to realize one-time exposure on the wafer through the combined projection pattern.
Since the first reflective mask pattern is physically separated from the second reflective mask pattern, this patented exposure imaging structure can make the edges of adjacent mask patterns free from light interaction (such as scattering, reflection or surface plasmon effects). SPP, etc.), can effectively eliminate the pattern defects on the wafer caused by the adjacent patterns, the resolution and contrast of the lithography process are greatly improved, and the pattern defects on the wafer (such as rounded corners, critical dimension (CD)) are reduced and end shrinking, etc.) are significantly improved, and a complete pattern can be obtained on the wafer with a single exposure, and the lithography process is also simplified.
, the examples given in the specification show that the light source structure comprises a plasma light source, generated from a gas or vapor, such as xenon gas, lithium vapor or tin vapor, bombarded by a carbon dioxide laser with a power of 30 kW twice per second to bombard the atomized tin (Sn) metal droplets (in which, tin metal droplets are ejected from the nozzle at a speed of 50,000 drops per second), tin (Sn) is evaporated into plasma, and the 13.5nm wavelength is obtained through the transition between high-valent tin ion energy levels of EUV light. (Proofreading / Chen Xinghua)
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