some progress in the carbon-based semiconductor development
Hosted by Beijing Yuanxin Carbon-based Integrated Circuit Research Institute, Beijing Yuanxin Carbon-based Integrated Circuit Research Institute, Beijing Huatan Yuanxin Electronic Technology Co., Ltd., Peking University, Beijing Angrui Microelectronics Technology Co., Ltd. jointly undertake the key points of Beijing The acceptance meeting of the subject "Research on the Key Process of 90nm Carbon-based Integrated Circuits" in the R&D project was held in Yizhuang Jintian Industrial Park. At the acceptance meeting, the experts of the acceptance team listened carefully to the project leader Professor Zhang Zhiyong's report, reviewed relevant materials and samples, and visited the 90-nanometer process leading wire under construction. After rigorous and careful review, the acceptance expert group believed that the subject undertaking unit had completed the R&D tasks specified in the task book and met the requirements of the assessment indicators, and unanimously recommended that the subject pass the acceptance.
Integrated circuit chips are the cornerstone of modern information technology. At present, the mainstream silicon-based semiconductor technology is faced with increasingly severe development challenges due to the limitations of processing technology and device physical limits, and it is urgent to find new information devices to promote the development of future electronics. Carbon-based integrated circuits have the advantages of low processing temperature, fast working speed, low power consumption, and easier realization of three-dimensional heterogeneous integration, and are most likely to become one of the disruptive technologies of integrated circuits in the post-Moore era.
IT Home has learned that theoretical simulation results show that carbon-based integrated circuits using three-dimensional integration have 1000 times the performance and power consumption comprehensive advantages of traditional integrated circuits. According to estimates from existing research results, 90-nanometer carbon-based integrated circuit technology can reach the comprehensive performance of the mainstream silicon-based 28-nanometer technology node. Therefore, 90-nanometer integrated circuit technology is a key node for the application of carbon-based integrated circuit technology.
It is worth noting that during the development of this project, various difficulties in the site and equipment have been overcome, and gratifying results have been achieved in the preparation of 90-nanometer carbon-based technology, key processes and device performance, and application exploration:
In terms of materials, we have developed high-quality 8-inch carbon tube array thin film materials with high semiconductor purity (above 99.9999%) and adjustable density (50 pieces/um-200 pieces/um), which is the first time in the world to promote carbon tube materials to the industry Recognized effective range of integrated circuits available;
In terms of process and performance, it has realized the line width and spacing that meets the 90-nanometer technology node and the efficient etching process for the metal and medium used, and can carry out the carbon-based transistor tape out of the 90-nanometer technology node. Carbon-based transistors with the world's best performance and better than silicon-based commercial devices;
In terms of application exploration, we took advantage of the performance of carbon-based materials and simplified device structure, and developed the best-performing carbon-based high-frequency radio frequency devices, highly sensitive gas and biosensing chips, radiation-immunized devices and circuits, and demonstrated carbon The application prospects of base integrated circuits.
These have laid a solid foundation for the follow-up 90-nanometer carbon-based integrated circuit complete process and lead construction, and will further accelerate the development of carbon-based integrated circuit technology and the industrialization of related applications.
