Chinese semiconductor thread II

jx191

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The 2017 prototype was just a very simple demonstrator. The more serious commercial project didn’t kick off till maybe 2019-20.
That makes sense considering it was around that time the need for self sufficiency really kicked in.

I wonder where the talk about production "by the end of the year" comes from or whether it's substantiated.
 

Wrought

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Preliminary result from SAMR today is that Nvidia did violate antitrust provisions by acquiring Mellanox in 2020, and that further investigation is warranted. As such, the probe which began in December will continue.

近日,经初步调查,英伟达公司违反《中华人民共和国反垄断法》和《市场监管总局关于附加限制性条件批准英伟达公司收购迈络思科技有限公司股权案反垄断审查决定的公告》,市场监管总局依法决定对其实施进一步调查。

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In practical terms, this will further raise the pressure on companies to avoid Nvidia products and boost domestic competitors in turn.
 

tokenanalyst

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Fuga Gallium Industry has completed nearly 100 million yuan in Series A+ financing to build a 6-inch gallium oxide single crystal and epitaxial wafer production line.​


Hangzhou Fuga Gallium Technology Co., Ltd. (Fuga Gallium) recently completed its Series A+ financing, raising nearly 100 million yuan. This round of financing was jointly participated by well-known institutions such as Shenzhen Capital Group, China Internet Investment, Renzhi Capital, Zhongying Venture Capital, and Shengde Investment.

This round of financing will primarily be used to build China's first 6-inch gallium oxide single crystal and epitaxial wafer production line, with an expected annual production capacity of 10,000 wafers by the end of 2026. This will fill the gap in the large-scale supply of gallium oxide materials in China and provide key support for the independent and controllable supply chain. The funds will also be used to improve the efficiency of gallium oxide single crystal preparation, optimize epitaxial quality, and verify devices, laying a solid foundation for subsequent product iterations and technology upgrades.

Public information shows that Fuga Gallium Industry, founded in December 2019, has always focused on the research and development and industrialization of gallium oxide materials. It is committed to opening up the entire technology chain from crystal growth to epitaxial preparation, and promoting gallium oxide from laboratory to large-scale application. Fuga Gallium Industry is engaged in the industrialization of wide-bandgap semiconductor gallium oxide materials. Its core products are gallium oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, gallium oxide crystal growth and processing equipment. These products mainly serve the fields of power devices, microwave radio frequency, and photoelectric detection.

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tokenanalyst

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Transport and diffusion properties of Tin-Hydrogen plasmas in extreme ultraviolet lithography reactor​

Abstract​

In this study, the variations of transport properties, including combined diffusion coefficients, of tin-hydrogen plasmas with temperature in an Extreme Ultraviolet (EUV) lithography reactor are calculated in the pressure range from 10 to 100 Pa and for tin mole fractions from 1% to 99%. The compositions are calculated by the rate balance equations, which consider highly charged tin ions and H2 photoionization in an EUV environment. H2 photoionization can lead to the dissociation of H2 molecules at a temperature lower than 1700 K. Compared with the case without photoionization processes, the H atoms mole fraction increases up to 3.25% at 10 Pa for 50% Sn + 50% H2. The combined ordinary, temperature and pressure diffusion coefficients first rise with increasing temperature and then decrease, forming a peak below 10,000 K. In an EUV reactor, as the tin plasma diffuses outward in the hydrogen environment of 10 Pa, it is estimated that tin would take about 200 μs to diffuse to the wall at a radius of 300 mm, under the influence of the concentration gradient based on a simplified 1D model. Close to the low-temperature wall, the viscosity decreases to a low value, but the thermal conductivity has a relatively high value due to the H2 photoionization. The results increase the understanding of Sn-H2 transport and diffusion processes and provide basic data for fluid dynamic simulations of EUV reactors directed toward optimizing the hydrogen buffer gas parameters to extend the service life of the collector mirror in EUV lithography.

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tokenanalyst

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Pengkan Semiconductor: TS-PON Gen2 chips are reshaping the underlying communication architecture of smart cars and robots​


In today's era of rapid digitalization and intelligent development, communication technologies for smart cars and robots are facing unprecedented challenges and opportunities. On September 10th, Global Semiconductor Observer interviewed Dr. Zhang Lu, co-founder and COO of Pengkan Semiconductor, to gain an in-depth understanding of the company's latest achievement in in-vehicle optical communications—the TS-PON Gen2 chip—and its plans for future technological development.

At this exhibition, Pengkan Semiconductor made a stunning debut with its innovative TS-PON Time-Sensitive Passive Optical Network (TS-PON) technology and Gen2 solutions. They showcased the TS-PON Gen2 core chip, as well as chips suitable for F5G-A optical broadband networks and compatible with the full-stack XG(S)PON/GPON/10GERPON/EPON protocols of ITU-T, IEEE, and domestic and international carrier standards, fully demonstrating the company's innovative strength in the optical communication chip field.

1. Passive Optical Network (PON) Technology: An Efficient Fiber Access Technology

The appeal of PON technology lies first in its passive nature: network devices like distributors and splitters require no power. This results in extremely low construction and maintenance costs. This architecture is particularly valuable in communications infrastructure because it simplifies the network architecture and reduces reliance on power supplies. Furthermore, its P2MP architecture makes the access network architecture extremely simple and efficient, making deployment more flexible and economical. This is the fundamental reason why operators worldwide are adopting PON to deploy optical broadband networks.

Based on PON's exceptionally cost-effective communication access architecture, Pengkan Semiconductor, from its inception, anticipated its potential to thrive in embodied intelligence, such as robots and smart cars, in the AI era. Consequently, using PON as its technological foundation, Pengkan Semiconductor innovatively integrated the microsecond-level ultra-low latency, high bandwidth, and diverse sensor access capabilities required by embodied intelligence into its groundbreaking TS-PON technology protocol. The company has applied for over 30 core international and domestic invention patents, over half of which have been granted. Furthermore, Pengkan Semiconductor launched the TS-PON Gen1 chip family as early as 2022.​

2. TS-PON Gen2 Chip: Technological Innovation Leads Communications Revolution

In May of this year, Pengkan Semiconductor officially launched the TS-PON Gen2 chip, the culmination of the company's years of expertise in optical communications. Dr. Zhang Lu detailed the technical features and innovations of the TS-PON Gen2 chip, specifically designed for edge AI applications such as robotics and intelligent manufacturing. Based on passive optical network (PON) technology, it integrates the characteristics of time-sensitive networking (TSN) to form a unique "TS-PON" technology system.

In terms of high bandwidth, the TS-PON Gen2 chip currently offers 10G bandwidth, with future expansion to 25G and 50G. This provides strong support for processing large amounts of data and saving costs. For example, in a multi-camera vision system on a robot head, large amounts of image data generated by high-definition cameras can be quickly transmitted over this fiber without data congestion. Furthermore, it offers microsecond-level latency, which is crucial for applications requiring fast response times, such as ensuring real-time delivery of robot control commands and feedback data, thereby supporting high-response motion control.

In terms of time synchronization optimization, the TS-PON Gen2 chip restructures the time synchronization protocol stack, reducing inter-node synchronization errors and improving real-time control accuracy. Dr. Zhang Lu explained that this is crucial for the synchronized motion control of multi-axis robots, ensuring precise coordination of the movements of each joint.

Standardized interfaces are also a highlight of the TS-PON Gen2 chip. Supporting standard interfaces such as PCIe, XFI, USB, and MIPI, it can directly connect to a variety of devices, significantly reducing integration difficulty and cost. In terms of security, the chip supports the national SM4 encryption algorithm, meeting the data security requirements of domestic industrial applications. This is of great significance for protecting a company's core data and intellectual property.

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Schmoe

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T
Shanghai Microelectronics' 28-nanometer lithography machines have achieved a high degree of domestic production capabilities, with over 85% of key components independently controlled.

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Thanks for the referenced article.

I had been assuming that the new DUVi was entirely domestic. A translation states the following with respect to imported components: ". . . mainly concentrated in ultra-high precision optical materials, vacuum systems, sensor core components"
 

LanceD23

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China commerce department initiated the anti-dumping on US interface chip and gate driver.
Heck no, there are other chips way more dumping than those two. This is all because suzhou semiconductor alliance filed this.
More chinese domestic firms need to step up and file.

Commerce department didnt do their homework rights,

much more dumping on china market including
operational amplifier, level shifter, comparator, linear voltage regulator, serializer/deserializer, Analog to Digital.
TXS0104E 4-bit bidirectional voltage level shifter.
TXS0108E-Q1 8 bit bidirectional level shifter
TL082Q dual 30V, 3Mhz 13 V/us slew rate FET input operational amplifier
LM324 operational amplifier, buffer amplifier
LM339 quad standard comparator
LM317LC 1.5A, 4V adjustable Linear voltage regulator
DS90UB941AS 2k DSI to FPD III serializer
PCM6360-Q1 automotive 6-ch Analog to digital converter with microphone bias
TXS010EQPWRQ1 voltage level translator
LM258A industry standard dual operational amplifier
 
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