Chinese semiconductor thread II

tphuang

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Question, which thread is communications/5G topic in the forum? Thanks.
we have a "ask anything thread" in this forum where you can ask this question

Please ask such questions in that thread rather than continually taking discussions off topic on semi thread. You are banned from posting on this thread for a month
 

tokenanalyst

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Guangdong: Q1 integrated circuit output increased by 42.8% year-on-year​


The Guangdong Provincial Bureau of Statistics released a brief summary of Guangdong’s economic performance in the first quarter of 2024.
According to the unified accounting results of regional GDP, in the first quarter, Guangdong achieved a regional GDP of 3.151066 billion yuan, a year-on-year increase of 4.4%, and the growth rate was 0.4 percentage points higher than the same period last year. Among them, the added value of the primary industry was 105.424 billion yuan, an increase of 3.7%; the added value of the secondary industry was 1.173552 billion yuan, an increase of 6.1%; the added value of the tertiary industry was 1.872090 billion yuan, an increase of 3.5%.

Among them, industrial production grew rapidly, with key industries providing stable support. In the first quarter, the added value of industries above designated size in Guangdong was 0.91 trillion yuan, a year-on-year increase of 6.1%. The growth rate was 4.7 percentage points higher than the same period last year and 1.7 percentage points higher than the whole year last year. Among the key industries, the added value of the computer, communications and other electronic equipment manufacturing industries increased by 18.2%, the added value of the electrical machinery and equipment manufacturing industry increased by 2.2%, the added value of the petroleum, coal and other fuel processing industry increased by 26.1%, chemical raw materials and chemical products The added value of the manufacturing industry increased by 5.4%, and the added value of the electricity and heat production and supply industry increased by 8.2%. In terms of products, the output of new energy vehicles, smartphones, and integrated circuits increased by 13.9%, 32.6%, and 42.8% respectively.

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ansy1968

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Kirin 9100 vs Snapdragon 8 GEN 1, 5nm chip vs 4nm

Kirin 9100 was previously said to match the Snapdragon 8 Gen 1’s performance, but no benchmark was specified at the time​

The rumor originated from Weibo, with an individual going by the name @DirectorShiGuan claiming on the overseas microblogging social network that the Kirin 9100 obtained a score of 1.1 million. The post was spotted by
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, but if you notice, there is no mention of the AnTuTu benchmark. Fortunately, that is unnecessary because the only testing suite that provides the results in millions is AnTuTu.


AnTuTu 10​

The AnTuTu Benchmark measures CPU, GPU, RAM, and I/O performance in different scenarios
Qualcomm Snapdragon 8 Gen 1
1178353


CPU311765
GPU436243
Memory211003
UX219342
Total score1178353

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2 hours ago — The Kirin 9100 could be found in the upcoming Mate 70 family, with early performance rumor claiming an equal footing with Snapdragon 8 Gen ...
 

tphuang

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Kirin 9100 vs Snapdragon 8 GEN 1, 5nm chip vs 4nm

Kirin 9100 was previously said to match the Snapdragon 8 Gen 1’s performance, but no benchmark was specified at the time​

The rumor originated from Weibo, with an individual going by the name @DirectorShiGuan claiming on the overseas microblogging social network that the Kirin 9100 obtained a score of 1.1 million. The post was spotted by
Please, Log in or Register to view URLs content!
, but if you notice, there is no mention of the AnTuTu benchmark. Fortunately, that is unnecessary because the only testing suite that provides the results in millions is AnTuTu.


AnTuTu 10​

The AnTuTu Benchmark measures CPU, GPU, RAM, and I/O performance in different scenarios
Qualcomm Snapdragon 8 Gen 1
1178353


CPU311765
GPU436243
Memory211003
UX219342
Total score1178353

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2 hours ago — The Kirin 9100 could be found in the upcoming Mate 70 family, with early performance rumor claiming an equal footing with Snapdragon 8 Gen ...
yes, he did say this, but Antutu isn't a particularly great measurement of chip performance, especially with respect to Harmony systems.

Geekerwan's testing already show Kirin 9010 to be better than SD8 Gen 1, but inferior to SD8+

As such, getting next gen Kirin chip (we don't know the name) to better than SD8+ should be a given.

And posting these western articles that recycle news from Chinese social media really isn't particularly useful
 

tokenanalyst

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Xinjinbang received A+ round of financing and is a module manufacturer with a self-developed memory particle testing machine.​


A Yihe Emerging Industry Fund, a subsidiary of Guosen Hongsheng, participated in the A+ round of financing of Chengdu Xinjinbang Technology Co., Ltd. (hereinafter referred to as "Xinjinbang"). It is reported that Xinjinbang has also previously received investment from industrial capital and venture capital institutions such as the Digital Economy Fund of Sichuan Development (Holding) Company, the Electronic Information Group of Chengdu Hi-Tech Investment Group, and Huaxi Yinfeng of West China Securities.

Guoxin Hongsheng news shows that Core Gold was established in September 2022. Its main body has nearly 30 years of experience in memory stick production and more than 20 years of experience in DRAM particle testing and screening. It operates under the "Gold Bond GEIL" brand in Hong Kong, Shenzhen and Taiwan carry out R&D, production and sales and other related businesses, and the products are sold in more than 50 countries around the world. Xinjinbang is a new platform for the strategic reorganization of businesses in the three places. It is headquartered in Chengdu High-tech Zone.

Xinjinbang is the only module manufacturer in China that has a self-developed memory particle testing machine. It is also one of the few third-party memory manufacturers in China that can produce server-level memory modules and completely uses localized materials for production.

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tokenanalyst

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Breakthrough Research: GaN-on-Diamond bonding interface thermal resistance significantly reduced​

Recently, researchers have achieved a landmark breakthrough in the field of semiconductor thermal management technology. Scientists from Tianjin Zhongke Jinghe and the University of Tokyo in Japan have successfully reduced the room temperature bonding interface resistance (TBR) between gallium nitride (GaN) and diamond through innovative surface activation bonding technology, providing efficient heat dissipation for electronic equipment. New paths were opened. Relevant results were published on the famous preprint paper platform arXiv.

For a long time, TBR in semiconductor diamond structures has been a bottleneck restricting the performance improvement of electronic devices. In order to overcome this problem, the research team adopted surface activation bonding technology of mixed SiOx-Ar ion source, which forms an ultra-thin and stable interface layer between GaN and diamond, and the oxide interface layer will provide better The excellent interface insulation performance is helpful for high-frequency radio frequency device applications.

1715005393797.png

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tokenanalyst

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NORTHERN HUACHUANG HELPS THE ADVANCED PACKAGING INDUSTRY TAKE OFF​


In the wave of AI innovation, we have witnessed the exploration and application from language dialogue to image and short video generation. The continuously derived application scenarios of AI are becoming an important force driving the iteration of AI large model technology and industry growth. Driven by application scenarios, AI requires higher-performance chips to meet the computing, sensing, storage, communication, security and other needs of data resources. Integrated circuit technology has huge room for innovation.

In recent years, chip three-dimensional integration technology has developed rapidly. The three-dimensional integration method can effectively improve the overall performance and yield of the chip. High-bandwidth storage HBM[1] and CoWoS[2] advanced packaging technologies have been widely used and accelerated, driving the integrated circuit equipment industry. High quality development.

Northern Huachuang has been deeply involved in the integrated circuit equipment industry for more than 20 years, and can provide customers in the advanced packaging field with TSV (Through Silicon Via) manufacturing, front-side process-Damascus process, back-side process-exposed copper etching and RDL (redistribution layer) process. Comprehensive solutions, involving more than 20 equipment process solutions in four categories: etching, thin film, furnace tube, and cleaning.

Among the etching equipment process solutions, Northern Huachuang PSE V300 equipment uses a combination of fast gas and radio frequency switching control systems in the TSV process to accurately control the sidewall morphology in high aspect ratio deep silicon etching to achieve sidewall No damage to the line width, better etching uniformity and selectivity; using a single-chip design per cavity, with better airflow field uniformity and true roundness process performance; by optimizing the machine wafer edge protection device, Improve product yield; in the 2.5D[3] process, Northern Huachuang provides etching process solutions that can meet the different process requirements of BVR (backside via hole exposure) and BFR (backside flat exposure); Northern Huachuang HSE D300 equipment The Plasma Dicing (plasma cutting) process has the advantages of high etching rate and high aspect ratio capability for small chip manufacturing. It has a variety of UV film [4] cooling methods to ensure the ductility of the UV film and achieve high-quality chips. Cutting; BMD P300 equipment is the main product of Descum (residual glue removal) in the packaging field. It is used in residual photoresist removal, residual metal removal, surface treatment in Bumping (bumping process), Fan out (fan-out packaging), 2.5D & 3D applications. In terms of activation and other processes, we provide customers with Descum solutions.

In the thin film deposition equipment process solution, Northern Huachuang uses PEALD (Plasma Enhanced Atomic Layer Deposition) to deposit the silicon dioxide protective layer, which can achieve better sidewall morphology and bottom layer coverage; in TSV Barrier/Seed Deposition The PVD (physical vapor deposition) equipment solution is used in the (barrier layer/seed layer deposition) process, which can meet the film thickness, uniformity, and adhesion requirements of the metal diffusion barrier layer/seed layer, prevent metal diffusion, and ensure the electrical performance of the device , structural integrity and process compatibility.

In the furnace tube equipment process solution, Northern Huachuang Equipment uses excellent temperature control capabilities and process performance in the annealing process of the TSV process to achieve a more uniform distribution of copper grains, reduce resistivity, and improve the manufacturing quality and performance of TSV. .

Among the cleaning equipment process solutions, Northern Huachuang equipment can combine water-soluble chemicals in the TSV process to effectively remove sidewall polymers and ensure the cleanliness of the inner walls of deep holes; it can reduce the corrosion rate of copper in the 2.5D process, Improve chemical application efficiency and achieve higher economic benefits.

Northern Huachuang provides a variety of core process equipment solutions for the advanced packaging field, and always adheres to customer demand-oriented, helping customers to develop and innovate, promote industrial progress, and create unlimited possibilities.

[1] AI’s demand for computing power and storage power has increased significantly, requiring huge memory bandwidth.

[2] AI chip training and inference require the transmission of large amounts of data between memory and processors. CoWoS can stack multiple chips together to achieve a high degree of integration and improve communication efficiency between chips.

[3] The 2.5D process is an advanced packaging technology that achieves vertical interconnections between different chips or chip areas by forming TSVs (through silicon vias) and RDL (redistribution layers) on the back side of the silicon wafer.

[4] It is mainly used to block the impact of ultraviolet rays on sensitive devices or processes to ensure high precision and quality in the semiconductor manufacturing process.​

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tokenanalyst

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GOWIN Semiconductor and Hong Kong Polytechnic University jointly explore the application of FPGA technology in the field of smart grid​

Guangdong Gowin Semiconductor Technology Co., Ltd. (hereinafter referred to as " Gowin Semiconductor ") and the School of Electrical and Electronic Information of the Hong Kong Polytechnic University reached a framework cooperation intention in Hong Kong, aiming to deepen the two parties' FPGA educational applications, electric Cooperation in the fields of automobiles, power grid transmission and smart grids.
The talk was attended by academician Chen Qingquan, an academician of the Chinese Academy of Engineering and a distinguished chair professor of the Department of Electrical and Electronic Engineering at PolyU, who is known as the "Father of Electric Vehicles in Asia", and a " Changjiang Scholar" chair professor of the Ministry of Education, IEEE Fellow, and Electrical Energy Engineering of the Hong Kong Polytechnic University. Professor Zou Guotang, Chair Professor , Co-Director of the Electric Vehicle Research Center , Academician of the Canadian Academy of Engineering, Foreign Member of the China Electrical Engineering Society, Academician of the Canadian Academy of Engineering, IEEE Fellow, Professor Zhong Zhiyong , Chair Professor and Dean of the Department of Electrical and Electronic Engineering at the Hong Kong Polytechnic University, etc. The professor team attached great importance to it and conducted in-depth exchanges and discussions with the Gowin Semiconductor team.

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