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Prospects of GaN technology in power and microwave electronics will be discussed at the forum "Microelectronics 2025"​

Issues of mastering new technologies for manufacturing microcircuits and semiconductor devices will be discussed at meetings of the section "Technologies and components of micro- and nanoelectronics" of the section "Technologies and components of micro- and nanoelectronics" of the Russian forum "Microelectronics 2025".
Gallium nitride technology is one of the most promising and rapidly developing areas in power and microwave electronics. The reason for this lies in the properties of gallium nitride, which significantly surpasses silicon, traditional for the semiconductor industry, in a number of key parameters, such as the bandgap width, critical field strength, and electron saturation drift velocity. Due to this, GaN transistors can operate at higher temperatures, at higher frequencies, with greater power density and energy efficiency than silicon ones.

Gallium nitride differs from silicon in its increased electron mobility and increased electrical strength. This means that with the same resistance and breakdown voltage values, a GaN transistor has smaller dimensions and smaller interelectrode capacitances compared to its silicon counterpart. This ensures twice as high specific currents and two orders of magnitude higher operating frequencies for GaN transistors compared to silicon devices.

The use of GaN technology is rapidly expanding, in particular, according to the study “RF GaN Market – Global Industry Analysis and Forecast”, the market for GaN-based RF components alone was $1.27 billion in 2023, and is expected to grow to $4.61 billion by 2030.

In the “Strategy for the Development of the Electronic Industry of the Russian Federation for the Period up to 2030”, GaN technology is included in the key area “Scientific and Technical Development”.

In the Russian Federation, several companies are actively developing electronic components based on this technology.

JSC NIIET (part of the Element Group) has been working on GaN-ECBs for over 15 years, using the capabilities of contract chip manufacturing. The company recently updated its line of power GaN transistors by developing the TNG-KV series of transistors with breakdown voltages of up to 650 V, optimized for operation with a voltage of 220 V in the primary AC network. The transistors are designed to work as keys in chargers for consumer electronics, electric vehicles, alternative energy converters, and power supply circuits for various equipment.

JSC NIIET, having launched microelectronic assembly production in polymer cases, has begun creating its own crystal production of transistors using gallium nitride technology on silicon. The project was approved by the interdepartmental commission on comprehensive investment projects on June 25, 2025. The project is financed using the cluster investment program (CIP) mechanism, the operator of which is the Industrial Development Fund (IDF) of the Russian Federation. The crystal production is planned to be launched by 2028 and to reach its design capacity of 5.5 thousand wafers per year within two years.

JSC PKK Milandr also developed a line of pseudomorphic transistors with high electron mobility based on gallium nitride with a supply voltage of up to 50 V and an output power of 5 W to 600 W, as well as devices with an output power of 1000 W and 1200 W in balanced cases using contract manufacturing of crystals. The transistors are intended for use in radar systems, radio countermeasures and navigation, in radio communication and telecommunication systems. Research work is underway on casing microwave GaN HEMT in metal-polymer cases.

JSC NPP Istok named after Shokin, within the framework of the R&D project T-NG-1, by order of the Ministry of Industry and Trade of Russia, is developing a manufacturing process and a comprehensive design tool (CDT) for microwave microcircuit systems based on gallium nitride heterostructures on silicon carbide substrates with a topological norm of 0.25 μm (DH025). Simultaneously with the R&D project, the equipping of the gallium nitride production line with technological and engineering equipment is being completed. In 2026, the developed comprehensive design tool will be available to all interested design centers.

For several years, Zelenograd Nanotechnology Center (ZNTC) has been working on developing technology and refining technological processes for the production of electronics for GaN(Si) power and microwave modules.

JSC Svetlana-Rost (Saint Petersburg) was the first in the Russian Federation to implement independent development and small-scale production of electronic components based on gallium nitride. Currently, for the first time in Russian microwave practice, the Svetlana-Rost foundry has begun serial deliveries of completely domestic GaN crystals designed for operation in the L, P and S ranges.

JSC OKB-Planeta (Veliky Novgorod) developed a fully closed technological process for manufacturing X-band microwave integrated circuits and X- and S-band microwave transistors based on GaN/AlGaN heterostructures on silicon carbide substrates for use in promising AFAR radar models within the framework of a project with FPI. The company has formed a closed technological line for manufacturing microwave integrated circuits, including design and manufacture of photomasks, crystal and assembly production.

The Microelectronics 2025 Forum will be held on September 21–27, 2025, on the territory of the Sirius University of Science and Technology (federal territory Sirius).

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gelgoog said:

That is pretty massive. 700 VK-2500 engines is over twice what they used to produce. Klimov used to make 300 such engines a year pre war.

Historic average production rate of the TV3-117 engines was like 600 engines a year.

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Deputy Prime Minister and Head of UEC Discuss Development of Enterprise in St. Petersburg​

20.06.2023
By 2030, the market demand for UEC-Klimov engines will be more than 5 thousand. The enterprise is implementing an investment program that involves modernizing existing production and increasing the capacity of the testing base.

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gelgoog said:

They are working on it. But the A-100 program seems to be botched up somehow. My guess is it started really late, the Il-76MD-90A platform was only available relatively recently in the first place, and it got delayed further as weapons programs often do.

They are developing pods for the Su-34NVO to act as sensors or jammers to replace the Su-24MR. They seem to have accelerated that program after the war started. But once again it was delayed because of lack of platform to put it in.

So what they have is the A-50U and the Tu-214R.

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vincent said:

Or they were using Western tech and with the sanctions, are having trouble getting substitutes.

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