Frequency-domain enhanced spatial multi-position moiré fringe alignment method
Abstract
Most existing lithography alignment methods adopt multi-wavelength light sources and off-axis illumination technologies. In practical lithography alignment scenarios, alignment marks are generally located in the wafer scribe lane, and their positions vary with the chip layout. Nevertheless, conventional off-axis illumination schemes are incapable of fixed-point illumination for alignment marks and coordinated regulation of light source wavelength and illumination incident angle. To address the above limitations, this paper proposes a frequency-domain enhanced spatial multi-position moiré fringe alignment method. The proposed method enables the modulation of illumination wavelength and incident angle at any position within the field of view of 7430 × 8830 μm, with an operating wavelength ranging from 532 nm to 635 nm. The measurement repeatability 3 value is less than 1 nm at arbitrary detection positions.



