Chinese semiconductor thread II
- Thread starter vincent
- Start date
Taiwanese companies are known for their ruthless labour abuses and exploitation of their workers . It’s well documented , even their factories in China were well known for their slave like labour abuses .
the fact that even the workers in a poor country like India said they had enough, shows just how much ruthless they are.
Well, at least India has some labour laws/unions to protect workers somehow . At least on papers .
They are NOT adopting the "Xtacking" architecture. Actually, they are licensing YMTC's hybrid-bonding patent portfolio to use their own hybrid-bonding implementations at 400L+ without IP risk. This is a defensive cross-licensing move, not a technology transfer in the way Chinese media is framing it.
Pangram generally has a low false positive rate, and the tenor of your message struck a false note, and so I submitted them...and they did not pass muster.
I really do suggest that you exercise your own judgement and express it in your own words, because it is impossible to argue in good faith with someone who doesn't expect to answer and account for his assertions or to have to put an effort into composing them. Not least when you haven't the excuse of requiring machine translation to communicate.
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okay, I must say once and for all. Jukan is a high school kid on twitter. Do not insult our intelligence by saying that he said it or anything like that. Post the original source.CXMT 1Q26 revenue: $7.46 Billion
CXMT 1Q26 net profit: $4.85 Billion
1Q revenue increased 719.13% YoY.
View attachment 175159
These numbers are beyond anything what we projected.
Note - this information Posted by Jukan on Twitter.
this is on Weibo for anyone to see
Wow…seems they have long surpass even SMIC by far. Interesting . If this is true then they will be th largest semiconductor company in China by a wide margin, and I think this is just the beginning since they can easily double this figures by next year as more of their fans comes online an AI boom which is only increasing not decreasing. So the gap between them and SMIC/other Chinese semi conductor companies will only increase .CXMT 1Q26 revenue: $7.46 Billion
CXMT 1Q26 net profit: $4.85 Billion
1Q revenue increased 719.13% YoY.
View attachment 175159
These numbers are beyond anything what we projected.
Note - this information Posted by Jukan on Twitter.
this is the official statement from the company as they are preparing for the largest ever IPO in coming month. most likely over a Trillion RMB. they are expecting further growth in second quarter and first half revenue will exceed 16-17 Billion dollars (110+ Billion RMB).
CXMT become the first Chinese semiconductor company to enter in 100 Billion RMB revenue club and will also become the first company to open 200 Billion RMB club.
Yeah I won’t be surprise if they achieve that. Afterall, the AI boom has been a boon for many semi conductor companies . TSMC has record double digit increase in sales and profits(doubling ) , ASML is making hundreds of billions, japans Kioxia who was facing decline has suddenly gained a new life and just made $8.2billion in profit just this first quarter (yes you read that right ) with even larger sales and expecting a profit of $25billion this year, Samsung market capitalisation has topped $1trillion recently and SK Hynix is about to also reach that figure . I’m actually surprised no Chinese company has reached such a valuation yet. So it should be expected that CXMT should at least reach a hundred billion valuation this coming year. That should be the minimum .
CXMT 3D DRAM.
Stacked DRAM Solution: Multilayer Horizontal Cell (MHC) 1T1C DRAM
Abstract:
Stacked dynamic random access memory (DRAM) technology has garnered considerable attention as a means to continue the relentless pursuit of scaling. In this context, we have developed a five-layer horizontal cell with vertical word line (WL) and pillar capacitor to realize a stacked DRAM architecture. This design boasts an excellent combination of high on-state and off-state current ratio ( Ion / Ioff) of ~1E8, a steep subthreshold slope (SS) of ~93 mV/dec and a moderate threshold voltage ( Vt) of 0.76 V. A novel process integration scheme incorporating boron silicate glass (BSG)/phosphorus silicate glass (PSG) capping doping, double gate formation, channel thickness optimization, and device electrical engineering considerations are presented and discussed. Moreover, we have also explored the feasibility of fabricating a 64-layer structure through the development of critical unit processes. This study suggests a promising approach using multilayer horizontal cells (MHCs) to further advance the scaling of DRAM technology.
