Chinese semiconductor thread II

[tokenanalyst]

Ezhou Xinruiyang Semiconductor Laser Manufacturing Project with an investment of 500 million yuan started​

According to Ezhou Media, on August 16, the Ezhou Xinruiyang semiconductor laser production and manufacturing project with an investment of 500 million yuan officially started.

The project focuses on the research and development and design of optical components, breaking through key technical bottlenecks, and achieving domestic leading product precision. After completion, it will have an annual production capacity of more than 10,220 sets of semiconductor lasers, with an estimated annual operating income of more than 400 million yuan and an annual total profit and tax of 60 million yuan. It will create more than 350 jobs, form a clustering effect with more than ten optoelectronics industry enterprises in Ezhou, and fill the gap in the upstream core component industry chain of Ezhou's optoelectronics.

A semiconductor laser, also known as a laser diode, uses semiconductor materials as its working medium. It is one of the most widely used and produced types of lasers. It generates laser light through the recombination of electron-hole pairs within the semiconductor material, releasing energy and achieving stimulated radiation. It boasts significant advantages such as small size, high efficiency, long life, and low power consumption, playing a core role in numerous fields including industry, communications, healthcare, and consumer electronics. According to data, Ezhou Xinruiyang Technology Co., Ltd. was established on July 27, 2023. The company's independently developed semiconductor lasers boast internationally leading performance and domestically leading product precision.

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[tphuang]

Nice.

I'm always on the cautious side and I'm concerned that the numbers are real, but not for Mate 80. The same Weibo people also said N+3 went into trial production in Q4 last year. It took TSMC N5 1.5 years to ramp up yield so there really isn't much time for Mate 80.

i mean it takes months to complete 1 batch. If they actually entered trial production in Q4 of last year, then the process must have been already stable enough to be tried on scale.

Basically, we have N+1 at 46nm pitch iirc
N+2 at 42nm and then 40nm
N+3 at 36nm seems like the next logical step to be

And going through a few batch for improving yield. Given the rash of rumors I have seen in the past month about Mate 80 and SoC and no hint of delays, I could only assume the yield is good enough for this process and that they've produced enough to be loaded into initial Mate 80 phones by this point.

 

[staplez]

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Old enough to remember when 5G was the tech that would have change the world, from surgery in your home to flying cars. The military will have smartphone connected drones and jet fighters. A drone operator would be bombing wedding parties in Kabul with his smartphone from home. That if the US lose the race will be a third rate power. US D.C. think tank stooges have the habit of overhyping technologies that they don't understand for political gains.

What people haven't realized is 5G was absolutely world changing and they were right, who ever wins, wins it all. China won and we are seeing the results. They're down playing it now saying they don't even need 6G because 5G changed so little. But that's because they aren't China.

5G completely changed logistics in China. How do you think China is coordinating all those super ports? We can have those giant car carriers because of 5G. Localized communication on ships like that would be wildly inefficient.

5G allows the existence of dark factories. Again, complete coordination and communication between different parts of the factories let's the robots do all the work without humans.

5G allows China to efficiently mine all those rare earths with robots significantly improving yield and safety.

5G allowed China to create what the West calls the over capacity problem. It's not subsidies, it's 5G and the efficiency gains from that. So to think that winning the 5G war was anything less than a world changing victory misunderstands what happened.

 

[tokenanalyst]

What people haven't realized is 5G was absolutely world changing and they were right, who ever wins, wins it all. China won and we are seeing the results. They're down playing it now saying they don't even need 6G because 5G changed so little. But that's because they aren't China.

5G completely changed logistics in China. How do you think China is coordinating all those super ports? We can have those giant car carriers because of 5G. Localized communication on ships like that would be wildly inefficient.

5G allows the existence of dark factories. Again, complete coordination and communication between different parts of the factories let's the robots do all the work without humans.

5G allows China to efficiently mine all those rare earths with robots significantly improving yield and safety.

5G allowed China to create what the West calls the over capacity problem. It's not subsidies, it's 5G and the efficiency gains from that. So to think that winning the 5G war was anything less than a world changing victory misunderstands what happened.

I agree that you would be correct, but in all those automation there are more than just 5G, a lot is complemented using China space satellite network, it required a lot of computational power just to automate at that level, so here comes the contribution of semiconductors and photonics for fast networking. And then you have Beidou contribution to China and the rest of world for access to precision positioning.

The US has a big 5G penetration but I don't see the dark factories and the efficient autonomous ports, except better netflix experience and no even that, because that trash of a company just randomly downgrade the streaming to save bandwidth. So I correct myself, 5G alone is not the game changer, that justify killing another major power companies creating a geopolitical tech minefield. Like always is a combination of technologies that is the game changer.

China EV alone was not the game changer, It was China EV technology + Battery advancements + Silicon Carbide - Power Electronics Advancements.

 

[siegecrossbow]

what did I tell you about being a newbie and read a little bit before you posting on this thread?

You are banned from this thread for a week.

He is probably a SleepyStudent alt and deserves more than thread ban…

 

[tokenanalyst]

View of China companies in the semiconductor grade SiC powder for SiC Ingot production


Henan Zhongyi Chuangxin Development Co., Ltd.

Henan Zhongyi Chuangxin Development Co., Ltd. was established on May 24, 2023, with registered capital of RMB 300 million. Located in the Henan Electronic Semiconductor Industrial Park in Weidong District, Pingdingshan City, the company is a joint venture between China Pingmei Shenma Holding Group and Pingdingshan Development Investment Holding Group. The company primarily develops and produces silicon carbide semiconductor powder with an annual output of 2,000 tons, striving to build China's largest silicon carbide semiconductor material base.

Construction on the first phase of the project, a 500-ton production line, commenced on June 20, 2023. It was completed and began trial production in 90 days, achieving the "Henan Speed"—the fastest construction, commissioning, and full production in the domestic industry. Product purity reached a maximum of 99.999998%. The Henan Provincial Party Committee praised the project as "a model for transformation and development, a model for implementing the Provincial Party Committee's strategy of changing lanes and taking the lead, and a model for building a world-class enterprise."

The company currently produces silicon carbide semiconductor powders in various types, including semi-insulating, nitrogen-doped, non-nitrogen-doped, and cubic. These powders are characterized by high purity and a comprehensive range of product types. As raw materials for silicon carbide semiconductors, they are widely used in silicon carbide single crystal growth. Our products have been validated by over 30 domestic companies and research institutions, with over a dozen already supplying them in bulk.

Shaoxing Jingcai Technology Co., Ltd.

Shaoxing Jingcai Technology Co., Ltd. is a domestic company specializing in the production of semiconductor-grade silicon carbide powders with particle sizes ranging from submicron to millimeter. The company specializes in polycrystalline powders, high-purity graphite powders , high-purity graphite parts, and high-purity graphite felt for third-generation semiconductor silicon carbide single crystals; ultra-high-purity powders for high-precision specialty silicon carbide ceramic components required for semiconductor manufacturing; and thermally conductive fillers for thermal management materials used in the 5G industry.

The company is committed to becoming a high-tech enterprise engaged in the research, development and production of high-purity raw and auxiliary materials for third-generation semiconductor silicon carbide single crystals. Currently, a large number of high-quality products with ultra-high purity (6N and above), particle size and uniformity, and crystal consistency have been put into mass production.

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Ningbo Alpha Semiconductor Co., Ltd.

Founded in 2018, the company is a high-tech enterprise with a 2 billion yuan investment. The company covers 105 mu (approximately 66 acres) of land, including 40,000 square meters of factory space. The company specializes in the research, development, production, and sales of SiC powders, crystals, and substrates for third-generation semiconductors. The Inner Mongolia plant is scheduled to begin production in May 2024, with an annual production capacity of 800 tons of high-purity silicon carbide powder.

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Wuhan Jinxin New Materials Co., Ltd.

According to the head of Jinxin New Materials, the company spent five years overcoming the technical challenges of ultra-high-purity purification of silicon carbide raw materials and the production of 6- to 8-inch silicon carbide ingots, achieving large-scale production of 8-inch silicon carbide substrate materials. Jinxin New Materials primarily develops and produces semiconductor silicon carbide ingots, semiconductor ultra-high-purity silicon carbide powder, and ultra-pure silicon carbide structural components, which are widely used in the chip and photovoltaic fields.

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Xi'an Bor New Materials Co., Ltd.

Xi'an Bor New Materials Co., Ltd. is a national high-tech enterprise specializing in the research, development, production, and sales of high-quality silicon carbide (SiC) powders and whiskers, as well as their downstream products. The company has independently invented and commercialized the production of cubic silicon carbide (β-SiC) powders and whiskers. Its core product, cubic silicon carbide, has been approved as a key new material by the Shaanxi Provincial Department of Industry and Information Technology and the Ministry of Industry and Information Technology of China. The company also leads the way in SiC powder fine grading and surface modification.

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Huzhou Yuanqin New Materials Co., Ltd.

Huzhou Yuanqin New Materials Co., Ltd. is located in Huzhou City, Zhejiang Province. It has factories and R&D companies in Huzhou and Shenzhen. It is a technology enterprise engaged in the research, market application and promotion of nano-materials such as nano-silicon carbide, high-purity silicon carbide, nano-silicon nitride, nano- titanium carbide, nano-boron nitride, high-purity boron carbide, nano-aluminum nitride, graphene nanosheets, ultra-precision new materials, new ceramic materials, new optoelectronic materials, and new superconducting materials.

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[tokenanalyst]

Huawei & Shandong University Breakthrough: 1200V Fully Vertical GaN-on-Si MOSFET​

Huawei and Shandong University recently jointly reported on a 1200V fully vertical GaN-on-Si trench MOSFET (FIT-MOS) utilizing a fluorine-implanted termination (FIT) structure. The inherent negative charge in the FIT region of the FIT becomes a resistive region, a natural isolation device that replaces the traditional mesa-etched termination (MET) and eliminates the electric field concentration effect at the mesa edge, thereby increasing the BV of the FIT-MOS from 567V to 1277V. Furthermore, the fabricated FIT-MOS exhibited a Vth of 3.3V, an ON/OFF ratio of 1e7, and an Ron,sp of 5.6mΩ·cm². These results demonstrate the great potential of cost-effective GaN-on-Si vertical transistors in kV-class applications. The related work was published in IEEE Electron Device Letters under the title " 1200 V Fully-Vertical GaN-on-Si Power MOSFET ."

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