ASML's EUV process (LPP) vs China's (LDP) EUV process:China's domestic extreme ultraviolet (EUV) lithography development is far from a distant dream. The newest system, now undergoing testing at Huawei's Dongguan facility, leverages laser-induced discharge plasma (LDP) technology, representing a potentially disruptive approach to EUV light generation. The system is scheduled for trial production in Q3 2025, with mass manufacturing targeted for 2026, potentially positioning China to break ASML's technical monopoly in advanced lithography. The LDP approach employed in the Chinese system generates 13.5 nm EUV radiation by vaporizing tin between electrodes and converting it to plasma via high-voltage discharge, where electron-ion collisions produce the required wavelength. This methodology offers several technical advantages over ASML's laser-produced plasma (LPP) technique, including simplified architecture, reduced footprint, improved energy efficiency, and potentially lower production costs.
Nope. LDP uses a laser to vaporize a tin drop which then gets excited by an electrode. It’s the same excitation mechanism as DPP. The design in the paper you shared is an experimental setup for studying LPP mechanisms. The laser is driving the excitation, not simply tin vaporization. The diagram itself is not based off any instrument design. It’s a purely experimental setup meant to collect data on excitation emissions for different laser parameters.Solid State LPP EUV I think is LDP.
Experimental Study on EUV Radiation Characteristics of 1μm Laser‐Excited Solid Sn Target Plasma
Laboratory of Ultra-Intense Laser Science and Technology, Shanghai Institute of Optics and Precision Mechanics
Solid-state lasers are expected to replace CO 2 lasers as the driving light source for the new generation of laser plasma extreme ultraviolet (LPP-EUV) lithography light sources due to their compact size, high electro-optical conversion efficiency, and potential for high power output. An experimental platform for 1 μm solid laser-driven plasma EUV light source was established, and the EUV radiation characteristics of 1 μm laser-excited solid tin (Sn) target plasma were experimentally studied. The mechanism of the influence of laser peak power density on the EUV spectrum of Sn plasma was analyzed, and the variation of conversion efficiency (CE) and spectral purity (SP) with laser peak power density was studied. The experimental results show that SP and CE are sensitive to changes in laser peak power density. In the research and development of EUV light sources, it is necessary to finely optimize the laser peak power density acting on the Sn target. At a laser peak power density of 8.24×10 10 W/cm 2 , a CE of up to 3.42% was achieved, which is at the international advanced level. The research results provide technical support for the localization research and development of solid laser driven plasma EUV lithography light source and measurement light source, which is of great significance for my country to independently carry out the research and development of EUV lithography and its key components and technologies.
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Interesting I was confusing it with this paper.Nope. LDP uses a laser to vaporize a tin drop which then gets excited by an electrode. It’s the same excitation mechanism as DPP. The design in the paper you shared is an experimental setup for studying LPP mechanisms. The laser is driving the excitation, not simply tin vaporization. The diagram itself is not based off any instrument design. It’s a purely experimental setup meant to collect data on excitation emissions for different laser parameters.