Gallium core semiconductor gallium oxide thick film epitaxial material completes device-level verification
Hangzhou Gallium Semiconductor's self-developed homogeneous thick-film epitaxial gallium oxide (β-Ga₂O₃) wafers have successfully completed device-level verification for Schottky barrier diodes at Xi'an University of Electronic Science and Technology. By fabricating terminal-structure-free SBDs, the company demonstrated that its materials possess critical properties such as uniform layer thickness, high crystal quality, controlled carrier concentration, and low interface defect density, all of which passed rigorous reliability testing. This achievement marks a significant milestone in transitioning gallium oxide from laboratory samples to mass-producible components, validating the material's suitability for next-generation power electronics while highlighting its potential to replace outdated discrete current sources with high-precision circuit solutions.
In the broader industry context, this joint university-industry project addresses one of the most critical bottlenecks facing domestic gallium oxide adoption: the consistency and yield of homogeneous epitaxial substrates required for high-voltage applications like new energy vehicle on-board modules and photovoltaic inverters. With this verification in hand, Gallium Core Semiconductor can now iteratively optimize doping precision and surface flatness to advance its product matrix from raw wafers to finished devices including edge-terminal-protected SBDs and MOSFETs. This step solidifies the company's capabilities for domestic substitution in advanced semiconductor materials, paving the way for scalable production of fourth-generation ultra-wide bandgap technologies essential for future high-power transmission and charging infrastructure.

