
China's first EUV machine is also traditional LPP powered light source just like ASML. but we should have many options like this one. glad Chinese institutes keep pushing the boundaries of different EUV light source.Interesting
Suzhou EUV Semiconductor Unveils Breakthrough Three-Beam DPP-EUV Light Source Prototype to Bypass ASML Patents & Accelerate Domestic LithographySuzhou Extreme Ultraviolet Semiconductor Co., Ltd. has officially released an engineering prototype of its self-developed three-beam plasma-coupled Discharge-Produced Plasma (DPP) EUV (13.5nm) light source. Led by Dr. Zhang Xingqiang and his team from Harbin Institute of Technology, the innovation offers a fully autonomous, low-cost alternative to ASML’s dominant Laser-Produced Plasma (LPP) route, while solving long-standing industrialization bottlenecks of traditional single-beam DPP systems.
Global commercial EUV lithography relies on LPP technology, which faces heavy patent walls, requires expensive high-power CO₂ lasers, and suffers from severe debris contamination at 50kHz operation rates. Traditional single-beam DPP sources struggle with low power output, rapid electrode degradation, and poor beam stability. The new prototype circumvents these issues by using gradient electrodes and a nanosecond synchronization system to merge three independent capillary plasmas into a large ring-shaped emission zone, fundamentally improving efficiency and scalability.View attachment 178291
High Power at Low Frequency: Achieves 630–1,050W of industrial-grade power at only 600–1,000Hz, drastically cutting thermal load and cooling requirements. Superior Beam Quality & Stability: Ring-shaped emission area improves photon collection efficiency and meets strict ±0.3% energy stability standards required for chip manufacturing. Low Debris & Long Lifespan: Reduced plasma frequency minimizes target ablation and optical mirror contamination, extending component life to over 1 year of continuous operation. Fully Domestic Supply Chain: Eliminates reliance on foreign lasers and precision parts; core components (capillaries, pulsed power supplies, vacuum modules, xenon gas systems) are fully locally producible. IP Independence: Entire architecture is original, bypassing overseas LPP patent blocks and enabling rapid commercial deployment.
The company has outlined a three-phase rollout: short-term aging tests and debris-suppression optimization; mid-term collaboration with Chinese suppliers to assemble an EUV lithography prototype; and long-term development of a fully autonomous commercial EUV system. Industry analysts note that this DPP-based pathway diversifies China’s EUV strategy, significantly lowering R&D costs and patent barriers while accelerating the localization of advanced semiconductor manufacturing equipment.
HUGE if true.Interesting
Suzhou EUV Semiconductor Unveils Breakthrough Three-Beam DPP-EUV Light Source Prototype to Bypass ASML Patents & Accelerate Domestic LithographySuzhou Extreme Ultraviolet Semiconductor Co., Ltd. has officially released an engineering prototype of its self-developed three-beam plasma-coupled Discharge-Produced Plasma (DPP) EUV (13.5nm) light source. Led by Dr. Zhang Xingqiang and his team from Harbin Institute of Technology, the innovation offers a fully autonomous, low-cost alternative to ASML’s dominant Laser-Produced Plasma (LPP) route, while solving long-standing industrialization bottlenecks of traditional single-beam DPP systems.
Global commercial EUV lithography relies on LPP technology, which faces heavy patent walls, requires expensive high-power CO₂ lasers, and suffers from severe debris contamination at 50kHz operation rates. Traditional single-beam DPP sources struggle with low power output, rapid electrode degradation, and poor beam stability. The new prototype circumvents these issues by using gradient electrodes and a nanosecond synchronization system to merge three independent capillary plasmas into a large ring-shaped emission zone, fundamentally improving efficiency and scalability.View attachment 178291
High Power at Low Frequency: Achieves 630–1,050W of industrial-grade power at only 600–1,000Hz, drastically cutting thermal load and cooling requirements. Superior Beam Quality & Stability: Ring-shaped emission area improves photon collection efficiency and meets strict ±0.3% energy stability standards required for chip manufacturing. Low Debris & Long Lifespan: Reduced plasma frequency minimizes target ablation and optical mirror contamination, extending component life to over 1 year of continuous operation. Fully Domestic Supply Chain: Eliminates reliance on foreign lasers and precision parts; core components (capillaries, pulsed power supplies, vacuum modules, xenon gas systems) are fully locally producible. IP Independence: Entire architecture is original, bypassing overseas LPP patent blocks and enabling rapid commercial deployment.
The company has outlined a three-phase rollout: short-term aging tests and debris-suppression optimization; mid-term collaboration with Chinese suppliers to assemble an EUV lithography prototype; and long-term development of a fully autonomous commercial EUV system. Industry analysts note that this DPP-based pathway diversifies China’s EUV strategy, significantly lowering R&D costs and patent barriers while accelerating the localization of advanced semiconductor manufacturing equipment.
Because is low cost and high power open the doors for more companies to try. Also helps the domestic EUV inspection equipment industry.China's first EUV machine is also traditional LPP powered light source just like ASML. but we should have many options like this one. glad Chinese institutes keep pushing the boundaries of different EUV light source.
