Chinese semiconductor industry

Status
Not open for further replies.
W

WTAN

Junior Member
Registered Member
Oldschool said:
@WTAN
does SMEE 28nm DUV uses the same projection lens system as the 90nm SSA600 ? only difference is using immersion or water therefore increase the resolution? SMEE using 国望光学 projection lens. I checked their website their product is Epolith A075型曝光光学系统
Its only good for 90nm under air or dry condition. There is no other system on their website.



Epolith A075型曝光光学系统是“国家科技重大专项02专项”的核心研究成果之一，是我国首套具有全部自主知识产权的90nm节点光刻机曝光光学系统。
Click to expand...
Epolith AO75 is the first generation of Optics and is only good for 90nm.

The latest Optics is much more advanced and is produced by Changchun Institute/Guowang Optics.

I believe it is good for 45nm Dry and
28nm Immersion.
 
M

Mt1701d

Junior Member
Registered Member
WTAN said:
It can produce 28nm Chips with Single Exposure/Patterning.

Yes it can produce 14nm with Multiple Exposures.

At the moment it cant do 7nm as more work has to be done to improve the accuracy and precision of the machine.
Click to expand...
@WTAN i was wondering how much time is added with multi patterning and how much throughput drops with multi patterning, so for example N vs N+1, would it be a straight up doubling of time and 1/2 throughput or is it more nuanced like does it depend on chip design or other factors?
 
O

Oldschool

Junior Member
Registered Member
WTAN said:
It can produce 28nm Chips with Single Exposure/Patterning.

Yes it can produce 14nm with Multiple Exposures.

At the moment it cant do 7nm as more work has to be done to improve the accuracy and precision of the machine.
Click to expand...
Thanks for the update.
If the new optics improves to 28nm using immersion, I think it can do 14nm using multiple pattern.

But for 7nm I suspect that set of optics won't work. Need another new set of improved optics.

i heard there are suppliers close to ready on 28nm photoresist.

for 14nm photoresist not close to ready.
 
G

gelgoog

Lieutenant General
Registered Member
AFAIK the photoresist material depends on the wavelength of the laser in question. So the photoresists will be the same for any ArF laser machine. The exception is that they use different photoresists for dry and immersion lithography. I think 7nm requires the use of quadruple-patterning. In theory a chip will have multiple layers and you could use lower resolution in some layers than others thus speeding up the lithography. This will depend on the process the fab uses and that particular chip design.
 
Last edited:
W

WTAN

Junior Member
Registered Member
Mt1701d said:
@WTAN i was wondering how much time is added with multi patterning and how much throughput drops with multi patterning, so for example N vs N+1, would it be a straight up doubling of time and 1/2 throughput or is it more nuanced like does it depend on chip design or other factors?
Click to expand...
With Multiple Patterning there is certainly greater cost and time involved.
Yes, doubling of time due to extra work and materials eg: Extra Masks etc. used to produce the same Chip.
At the same time the Yield rate drops as well due to greater chances of defects and spoilage with the additional processes.

Thats why they are using EUVL now as you can almost produce 5/7nm Chips with a Single Exposure.
 
Status
Not open for further replies.
Top