Liquid phase method, 3C-SiC! The Chinese Academy of Sciences made new achievements
Chen Xiaolong's team from the Institute of Physics, Chinese Academy of Sciences once again announced their new research and development results in SiC :
On April 18, the Institute of Physics of the Chinese Academy of Sciences published a technical document on the growth of 3C-SiC substrates by the liquid phase method .
The literature mentioned that the team grew 3C-SiC single crystals on 4H-SiC substrates, and the technical achievements exceeded previous theoretical expectations. Through this technology, they were able to continuously and stably grow high-quality and large-sized 3C-SiC Crystals - 2 to 4 inches in diameter and 4.0 to 10 mm thick .
The team believes that this technology broadens the mechanism of heterogeneous crystal growth and provides a feasible way for the mass production of 3C-SiC crystals. In the future, the performance of 3C-SiC power devices is expected to be better than the current mainstream 4H-SiC
The team developed a liquid-phase TSSG crystal growth equipment for growing 3C-SiC. The growth process is as follows: first, dissolve C powder in the high-temperature graphite crucible area; then, under convection, transport C powder from the high-temperature area to the Low temperature zone; finally 3C-SiC crystallization is carried out on the low temperature seed crystal.
