Sinlink Integrated's "WAT Test Structure and WAT Test Method" patent published
Tianyancha shows that the patent of "WAT test structure and WAT test method" of Xinlian Integrated Circuit Manufacturing Co., Ltd. has been announced. The application publication date is March 18, 2025, and the application publication number is CN119650549A.
The present invention provides a WAT test structure and a WAT test method. The WAT test structure comprises: a first metal layer, a second metal layer, and a contact hole structure. The first metal layer and the second metal layer are stacked and spaced apart, and are electrically connected to each other through the contact hole structure. The first metal layer includes a common component and multiple test components electrically connected to the common component, with different test components having different areas. In the WAT test structure provided by the present invention, since different test components in the first metal layer have different areas, when different test components are electrically connected to the contact hole structure and electrically conductive to the second metal layer, monitoring the WAT structure will result in different test resistances. Based on the magnitude of the test resistance, the specific test component electrically connected to the contact hole structure can be determined, and the offset state of the first metal layer can be further determined.